Abstract:In this study, X-ray photoelectron spectroscopy (XPS) is used to study the annealing effects on the structure and chemical states of Si-rich SiOx (x<2) films. The analysis of the XPS Si 2p peaks shows the existence of the five chemical structures corresponding to the Si oxidation states Sin+ (n = 0, 1, 2, 3), and 4) in the SiOx films. The XPS results clearly show the evolution of various chemical structures and the formation of Si nanocrystals (corresponding to the oxidation state Si-0) in the SiOx films as a function of annealing temperature and annealing time. The results are explained in terms of the thermal decompositions of the suboxides Si2O, SiO and Si2O3 (corresponding to the oxidation states Si1+, Si2+ and Si3+, respectively). The thermal decompositions lead to the growth of SiO (2) (corresponding to the oxidation state Si4+) as well as the fori-nation of Si nanocrystals in the SiOx films. On the other hand, the depth profiling experiment was carried Out with ion sputtering. The relative concentration of each oxidation state at various depths is determined quantitatively from the XPS analysis. In addition, annealing effects on both the oxidation states and their depth distributions are studied as well.

A Study of the Correlation Between Ultraviolet and Infrared Emission in Ni-doped SiOxfilms

A Study of the Correlation Between Nickel and the Ultraviolet Emission in SiOx Films

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Strong near-infrared luminescence from NiSi2-passivated silicon nanocrystals embedded in SiOx films

Nickel-Induced Enhancement of Photoluminescence from Si-Rich Silica Films

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Influences of Annealing Temperature on the Optical Properties of SiOx Thin Film Prepared by Reactive Magnetron Sputtering

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Infrared Spectra of Silicon Nanowires

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Evolutions and distributions of Si nanocrystals and other Si oxidation states in Si-implanted SiO2 films

Correlation Between Luminescence and Structural Evolution of Si-rich Silicon Oxide Film Annealed at Different Temperatures