Abstract:Ab initio methods based on density functional theory are employed to investigate the bonding of oxygen (O) at the oxide/nanocrystal (NC) interface after hydrogen (H)-passivated silicon (Si) NCs are oxidized. Besides the well-known quantum confinement effect, the type of O bonding and the oxidation state of Si at the oxide/NC interface are found to significantly affect the optical properties of oxidized Si NCs. After oxidation, the excitation energies of Si-35 and Si-66 increase, while those of Si-87 and Si-123 decrease. We show that oxidation-induced redshifts in the light emission from Si NCs do not always result from defective O such as doubly bonded O at the oxide/NC interface. When Si atoms at the oxide/NC interface are mainly in low oxidation states, backbond O at the interface per se results in the redshifts in the light emission from Si NCs. When Si atoms at the oxide/NC interface are mainly in high oxidation states. Si3+=O at the interface leads to the redshifts in the light emission from Si NCs. It is found that for Si NCs with perfect oxide/NC interface (i.e., O at the interface is all backbond O) the seriously weakened next-nearest-neighboring Si Si of Si3+ readily breaks after excitation. At the oxide/NC interface. Si2+=O induced strong electronic localization and Si2+=O and Si3+=O induced reduction of interface polarization stabilize the geometry of oxidized Si NCs at the excited state. The electronic localization of severely stressed bridge O at the oxide/NC interface is relatively weak. This facilitates the breaking of nearest-neighboring Si Si at the oxide/NC interface as oxidized Si NCs are excited.

A Study of the Correlation Between Nickel and the Ultraviolet Emission in SiOx Films

A Study of the Correlation Between Ultraviolet and Infrared Emission in Ni-doped SiOxfilms

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films

Evolutions and distributions of Si nanocrystals and other Si oxidation states in Si-implanted SiO2 films

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Nickel-Induced Enhancement of Photoluminescence from Si-Rich Silica Films

Correlation of annealing temperature on physico-chemical properties and electrochromic performance of nebulizer spray-coated NiO films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Study of Annealing Effects Upon the Optical and Electrical Properties of SnO2:F/SiCxOy Low Emissivity Coatings by Spectroscopic Ellipsometry

Research on Nickel Induced Silicon Nanocrystal Growth

Influences of Annealing Temperature on the Optical Properties of SiOx Thin Film Prepared by Reactive Magnetron Sputtering

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry