Abstract:The formation of titanium silicides has been studied using simultaneous in situ x-ray diffraction with millisecond time resolution and sheet resistance measurements. The effect of a Mo interposed layer between Ti films and Si substrate was investigated by varying the thickness of the Mo interlayer from 0 (Ti/Si) to 1.8 nm (Ti/Mo/Si). The thickness of Ti was kept to 55 nm for all samples. Both isothermal annealing and ramp annealing in helium were performed in order to study the mechanism of silicide formation. While C49 TiSi2 was the only disilicide found after annealing Ti/Si at 650 °C for 20 min, C54 TiSi2 was readily formed in the presence of Mo. The formation of C49 TiSi2 was not observed with a 1.8 nm thick Mo interlayer. Instead, there was indication that C40 (Mo,Ti)Si2 was formed. In addition, broad diffraction peaks, weak in intensity, could be all assigned to Ti5Si4. However, the presence of Ti5Si4 alone did not induce the formation of C54 TiSi2. Even with a 20 °C increase in isothermal annealing temperature to 670 °C for 20 min, the presence of Mo was found to be a necessity for the formation of C54 TiSi2. When annealed in nitrogen, instead of helium, the formation of surface titanium nitride competes with the formation of silicides. The formation of C54 TiSi2 was even suppressed in the sample with a 1.8 nm Mo interlayer when annealed at 650 °C in nitrogen. The formation of Ti5Si4 and the role it plays in the formation of other silicides (C40, C49, and C54) are discussed on the basis of simple crystallographic considerations. The effect of a Mo interlayer and/or ramp-rate on the formation of C40 (Mo,Ti)Si2 and C49 TiSi2 is discussed in conjunction with variations of the preferential orientation of C54 TiSi2 films.

Influence of Ti Interlayer on Untrathin Ni Film Silicidation

Effect of Pt Interlayer on Thermal Stability of NiSi Films

Interface diffusion and reaction between Ti layer and Si3N4/Si substrate

Interface diffusion and reaction between Ti layer and Si<sub>3</sub>N<sub>4</sub>/Si substrate

Enhanced Thermal Stability of NiSi Films on Si(111) Substrates by a Thin Pt Interlayer

Improvement Of The Thermal Stability Of Nisi Films By Using A Thin Pt Interlayer

Enhanced Effects of Pt Layer on Thermal Stability of NiSi Thin Film by Solid Phase Reaction of Ni/Si(100) System

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

Mechanism about Improvement of NiSi Thermal Stability for Ni/Pt/Si(1 1 1) Bi-Layered System

Advances in the Formation of C54-FiSi2 with an Interposed Refractory Metal Layer Some Properties

Effect of a thin W, Pt, Mo, and Zr interlayer on the thermal stability and electrical characteristics of NiSi

The effects of Si3N4 interlayer on the thermal stability and hardness of Ti/TiNx (x = 0.5-1) nanolayered coatings

Influence of Interface Layer on Optical Properties of Sub-20 Nm-Thick TiO2 Films

Interface and crystallization evolution induced by reactive nitrogen and oxygen sputtering in Ni/Ti multilayer

In Situ Characterization of Titanium Silicide Formation: the Effect of Mo Interlayer, Temperature Ramp-Rate, and Annealing Atmosphere

Ni(Pt)Si Thin Film Formation and Its Electrical Characteristics with Si Substrate

Annealing Behavior of Ultrathin Mo Layer Located at Interface or on Surface of Ti－Si System

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

Film Thickness Dependence of the Nisi-To-Nisi2 Transition Temperature in the Ni/Pt/Si(100) System

Comparison of the Thermal Stabilities of Nisi Films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si Systems