Abstract:The formation of titanium silicides has been studied using simultaneous in situ x-ray diffraction with millisecond time resolution and sheet resistance measurements. The effect of a Mo interposed layer between Ti films and Si substrate was investigated by varying the thickness of the Mo interlayer from 0 (Ti/Si) to 1.8 nm (Ti/Mo/Si). The thickness of Ti was kept to 55 nm for all samples. Both isothermal annealing and ramp annealing in helium were performed in order to study the mechanism of silicide formation. While C49 TiSi2 was the only disilicide found after annealing Ti/Si at 650 °C for 20 min, C54 TiSi2 was readily formed in the presence of Mo. The formation of C49 TiSi2 was not observed with a 1.8 nm thick Mo interlayer. Instead, there was indication that C40 (Mo,Ti)Si2 was formed. In addition, broad diffraction peaks, weak in intensity, could be all assigned to Ti5Si4. However, the presence of Ti5Si4 alone did not induce the formation of C54 TiSi2. Even with a 20 °C increase in isothermal annealing temperature to 670 °C for 20 min, the presence of Mo was found to be a necessity for the formation of C54 TiSi2. When annealed in nitrogen, instead of helium, the formation of surface titanium nitride competes with the formation of silicides. The formation of C54 TiSi2 was even suppressed in the sample with a 1.8 nm Mo interlayer when annealed at 650 °C in nitrogen. The formation of Ti5Si4 and the role it plays in the formation of other silicides (C40, C49, and C54) are discussed on the basis of simple crystallographic considerations. The effect of a Mo interlayer and/or ramp-rate on the formation of C40 (Mo,Ti)Si2 and C49 TiSi2 is discussed in conjunction with variations of the preferential orientation of C54 TiSi2 films.

Annealing Behavior of Ultrathin Mo Layer Located at Interface or on Surface of Ti－Si System

Differences Between Interfacial and Surface Molybdenum in the Formation of Tisi2

In Situ Characterization of Titanium Silicide Formation: the Effect of Mo Interlayer, Temperature Ramp-Rate, and Annealing Atmosphere

Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates

Different Routes to the Formation of C54tisi(2) in the Presence of Surface and Interface Molybdenum: A Transmission Electron Microscopy Study

Enhanced Formation of the C54 Phase of Tisi2 by an Interposed Layer of Molybdenum

FORMATION OF C54 TiSi2 ON Si(100) USING Ti/Mo AND Mo/Ti BILAYERS

The Formation of C54 TiSi<sub>2</sub> in The Presence of Implanted or Deposited Molybdenum

The Formation of C54 TiSi2 in The Presence of Implanted or Deposited Molybdenum

Alternative Pathway for the Formation of C54tisi(2)

FORMATION OF C54 <font>TiSi</font><sub>2</sub> ON <font>Si</font>(100) USING <font>Ti/Mo</font> AND <font>Mo/Ti</font> BILAYERS

Interface diffusion and reaction between Ti layer and Si<sub>3</sub>N<sub>4</sub>/Si substrate

Interface diffusion and reaction between Ti layer and Si3N4/Si substrate

A self-aligned silicide technology with the Mo/Ti bilayer system

Influence of Ti Interlayer on Untrathin Ni Film Silicidation

Micromorphology evolution, growth mechanism, and oxidation behaviour of the silicon-rich MoSi 2 coating at 1200 °C in air

The Effect of Thermal Annealing of Mo Film on the CuInSe2 Layer Texture and Device Performance

Microscopic Evidence Ofc40andc54in(ti

Silicide layer growth rates in Mo/Si multilayers

Microstructural evolution of Fe/Ti multilayers submitted to in situ thermal annealing

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction