Microscopic Evidence Ofc40andc54in(ti

A. Mouroux,Thierry Épicier,Shili Zhang,P. Pinard

DOI: https://doi.org/10.1103/physrevb.60.9165

1999-01-01

Abstract:The formation of $C54{\mathrm{}\mathrm{TiSi}}_{2}$ with a thin Ta layer deposited between Si and Ti is investigated at atomic scale level using transmission electron microscopy. When the Si/Ta/Ti structure is annealed at 650 \ifmmode^\circ\else\textdegree\fi{}C for 30 s, both $C40$ and $C54{(\mathrm{T}\mathrm{i},\mathrm{T}\mathrm{a})\mathrm{Si}}_{2}$ are found at the Si/silicide interface. The Ta-to-Ti ratio in such $C40$ or $C54$ grains changes rapidly from 0.11--0.12 at the interface to 0 at a distance about 35 nm away from the interface. The observation of $C40{\mathrm{}\mathrm{TiSi}}_{2}$ and $C54{\mathrm{}(\mathrm{T}\mathrm{i}}_{0.89}{\mathrm{Ta}}_{0.11}{)\mathrm{S}\mathrm{i}}_{2},$ is a consequence of epitaxial growth at low temperatures. After annealing at 750 \ifmmode^\circ\else\textdegree\fi{}C, the $C40$ phase is not detectable by electron or x-ray diffraction. These results verify, from a microscopic point of view, the template mechanism suggested earlier for the enhanced formation of $C54{\mathrm{}\mathrm{TiSi}}_{2}$ in the presence of Mo, Nb, or Ta, based on the macroscopic analysis results. In addition, the high-Ta contents in the $C54$ phase induce a high concentration of stacking faults in the 〈010〉 direction along which epitaxy of $C54{\mathrm{}(\mathrm{T}\mathrm{i},\mathrm{T}\mathrm{a})\mathrm{Si}}_{2}$ on $C40{\mathrm{}(\mathrm{T}\mathrm{i},\mathrm{T}\mathrm{a})\mathrm{Si}}_{2}$ takes place.