Abstract:In this work, AFM and sheet resistance measurements are used to characterize the thermal stability of thin CoSi2 films. We were particularly interested in the influence of different multilayer structures on the topography and surface roughness. Four different multilayer structures (Co/Si, TiN/Co/Si, Ti/Co/Si and Co/Ti/Si) were investigated. Thermal degradation of CoSi2 formed from a standard Co/Si structure is found to have an activation energy of about 4.2 eV, independent of layer thickness (in agreement with previous results by Alberti et al.). A TiN capping layer is shown to improve the thermal stability. However, if the TiN layer is too thick (e.g. 50 nm), a new failure mode is observed: although the TiN prevents grain boundary grooving of the silicide, the thermal stress induced by the TiN causes the CoSi2 layer to crack. For a Ti capping layer, a strong increase of the thermal stability of the CoSi2 layer is observed, even if the Ti capping layer is removed by a selective etching step after the first RTP annealing. The presence of a very thin Ti-O-N containing layer on the CoSi2surface seems to strongly decrease surface diffusion and in this way reduce the tendency for grain boundary grooving.

Formation of Epitaxial CoSi2 Layers Grown from the Interaction of Co/Ti Bilayers with Si <100> Substrates

On The Formation Of Inhomogeneities In Epitaxial Cosi2 Layers Grown From The Interaction Of Co/Ti Bilayers With Si<100> Substrates

On the Formation of Epitaxial Cosi2 from the Reaction of Si with A Co/Ti Bilayer

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Epitaxial-Growth Of Cosi2 On Both (111) Si And (100) Si Substrates By Multistep Annealing Of A Ternary Co/Ti/Si System

The Influence of Ti and TiN on the Thermal Stability of CoSi2.

Epitaxial growth of CoSi2 films by solid state reaction of Co/Ti/Si

CoSi2 Formation Using Ti-capping Layer

Epitaxial growth of CoSi 2 film by Co Õa-SiÕTiÕSi„100... multilayer solid state reaction

Epitaxial Growth Of Cosi2 Film By Co/A-Si/Ti/Si(100) Multilayer Solid State Reaction

Epitaxial growth of CoSi2 by Co/C/Si solid phase epitaxy

Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

Electrical Characterization And Physical Analysis Of Epitaxial Cosi2 Grown From The Si<100>/Ti/Co System

Interdiffusion and Phase-Formation During Thermal-Processing of Co/Ti/Si(100) Structures

Process and Mechanism of Cosi2/Si Solid Phase Epitaxy by Multilayer Reaction

The Effect Of Amorphous Si On The Epitaxial Growth Of Cosi2 By Co/Si/Ti/Si Solid State Epitaxy

Growth of epitaxial CoSi2 films on Si(1 0 0) substrates through direct solid phase reaction between crystalline Co films and Si substrates

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Study on Thermal Stability of Thin CoSi2 Film

Formations and Morphological Stabilities of Ultrathin Cosi2 Films