Abstract:Epitaxial films of cuprous oxide, Cu2O, are electrodeposited from aqueous solution onto single-crystalline Si(001). The epitaxial growth of Cu2O onto Si is an unexpected result, because there is a strong driving force for the oxidation of Si to form a native amorphous SiO2 layer. The Cu2O films are single-crystalline in nature, with little or no fiber texture. High-resolution X-ray diffraction shows that the very large lattice mismatch of -21.4% is reduced to +11.2% by the formation of a Cu2O(001)[100]HSi(001)[110] orientation relationship, in which the film is rotated 45degrees around the common [001] axis. Cross-sectional transmission electron microscopy studies suggest that the growth mechanism involves an initial electroless deposition Of Cu2O epitaxial seeds in direct contact with the Si(001), with the concomitant oxidation of Si to form a layer of amorphous SiO2 about 3 nm thick.. Electrochemical deposition Of Cu2O then proceeds on the epitaxial seeds, with the deposit growing not only perpendicular to the surface, but also laterally across the SiO2 interlayer. This type of lateral overgrowth is used in the production of semiconductor-on-insulator (SOI) structures to avoid defects due to misfit strains.

Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Epitaxial-Growth Of Cosi2 On Both (111) Si And (100) Si Substrates By Multistep Annealing Of A Ternary Co/Ti/Si System

Epitaxial growth of CoSi 2 film by Co Õa-SiÕTiÕSi„100... multilayer solid state reaction

Epitaxial growth of CoSi2 films by solid state reaction of Co/Ti/Si

Growth of epitaxial CoSi2 films on Si(1 0 0) substrates through direct solid phase reaction between crystalline Co films and Si substrates

Epitaxial Growth Of Cosi2 Film By Co/A-Si/Ti/Si(100) Multilayer Solid State Reaction

Epitaxial growth of CoSi2 by Co/C/Si solid phase epitaxy

Process and Mechanism of Cosi2/Si Solid Phase Epitaxy by Multilayer Reaction

The Effect Of Amorphous Si On The Epitaxial Growth Of Cosi2 By Co/Si/Ti/Si Solid State Epitaxy

Multilayer solid phase reaction and epitaxial growth of metal silicide on Si

On The Formation Of Inhomogeneities In Epitaxial Cosi2 Layers Grown From The Interaction Of Co/Ti Bilayers With Si<100> Substrates

Formation of Epitaxial CoSi2 Layers Grown from the Interaction of Co/Ti Bilayers with Si <100> Substrates

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

Si/CoSi/sub 2//si[100] Heteroepitaxial Growth by Molecular Beam Epitaxy and Novel Solid Phase Epitaxy

Epitaxial Electrodeposition of a Crystalline Metal Oxide onto Single-Crystalline Silicon

On the Formation of Epitaxial Cosi2 from the Reaction of Si with A Co/Ti Bilayer

Optimizing the Growth of Cosi2 Film with Oxide-Mediated Cosi2 Template by Silicon Cap Layer

Electrical Characterization And Physical Analysis Of Epitaxial Cosi2 Grown From The Si<100>/Ti/Co System

CoSi2 Formation Using Ti-capping Layer