Abstract:The electrical and structural properties of epitaxial CoSi2 layers grown on Si by solid-state interaction between Ti/Co bimetallic layers and Si(100) substrates have been investigated. The Schottky barrier height (SBH) of the CoSi2-Si contact determined by current-voltage characteristics at room temperature varies between 0.64 and 0.71 eV on the n-type substrates and between 0.47 and 0.43 eV on the p-type substrates. The variation of the SBH is found to be related to the Interfacial properties at the CoSi2-Si contact which is in turn determined by the heat treatment used for the CoSi2 formation. The formation of polycrystalline CoSi2 is found to be responsible for the low SBH deviated from 0.71 eV on the n-type substrates and the high SBH deviated from 0.43 eV on the p-type substrates. The formation of a ternary compound, identified as Co16Ti6Si7, within the epitaxial CoSi2 does not seem to affect the SBH on the n-type substrates. A permeable base transistor (PBT) was fabricated using the epitaxial CoSi2 for self-aligned contact metallization. The current-voltage characteristics of the PBTs are presented. (C) 1996 American Institute of Physics.

Si/CoSi/sub 2//si[100] Heteroepitaxial Growth by Molecular Beam Epitaxy and Novel Solid Phase Epitaxy

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Epitaxial growth of CoSi2 by Co/C/Si solid phase epitaxy

Process and Mechanism of Cosi2/Si Solid Phase Epitaxy by Multilayer Reaction

Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

Epitaxial growth of SiC on (100) Diamond

Multilayer solid phase reaction and epitaxial growth of metal silicide on Si

Epitaxial growth of CoSi2 films by solid state reaction of Co/Ti/Si

Growth of epitaxial CoSi2 films on Si(1 0 0) substrates through direct solid phase reaction between crystalline Co films and Si substrates

Epitaxial Growth Of Cosi2 Film By Co/A-Si/Ti/Si(100) Multilayer Solid State Reaction

Epitaxial growth of CoSi 2 film by Co Õa-SiÕTiÕSi„100... multilayer solid state reaction

The Effect Of Amorphous Si On The Epitaxial Growth Of Cosi2 By Co/Si/Ti/Si Solid State Epitaxy

Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy

On The Formation Of Inhomogeneities In Epitaxial Cosi2 Layers Grown From The Interaction Of Co/Ti Bilayers With Si<100> Substrates

Electrical Characterization And Physical Analysis Of Epitaxial Cosi2 Grown From The Si<100>/Ti/Co System

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Epitaxial-Growth Of Cosi2 On Both (111) Si And (100) Si Substrates By Multistep Annealing Of A Ternary Co/Ti/Si System

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Heteroepitaxial Growth of GexSi1-x Strained Layer on Si by RRH/VLP-CVD

Epitaxial Cosi2 Layers Fabricated by A Single-Step Technique of High-Current Co-Ion Implantation

Formation of Epitaxial CoSi2 Layers Grown from the Interaction of Co/Ti Bilayers with Si <100> Substrates