Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

Heteroepitaxial Growth of GexSi1-x Strained Layer on Si by RRH/VLP-CVD

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Growth of SiC Buffers for Strained Si Film Epitaxy

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

Low-Temperature Epitaxy of Phosphorus Doped Si and Si1-Xgex Films by Rtp/Vlp-Cvd

Study of Strain in Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum／Chemical Vapor Depostion

The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition

Surface morphology study and electrical properties of Si1 - xCx on Si grown by low pressure chemical vapor deposition

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD