Abstract:This paper review the research works made so far in associating Ge isoelectronic element to SiC crystals, either by incorporating it inside SiC matrix or for assisting SiC epitaxial growth. The incorporation mechanism and level of incorporation of Ge in SiC during crystal growth with different techniques (sublimation, chemical vapor deposition, vapor-liquid-solid) are compared and discussed. Ge doping level as high as 2-3x1020 at.cm−3 can be reached without affecting SiC crystalline quality but generating some strain. Higher Ge incorporation levels up to few at% can be reached using farer-to-equilibrium conditions such as ion implantation or molecular beam epitaxy. The former allows retaining 4H-SiC polytype while the latter leads exclusively to defective 3C-SiC polytype. Adding Ge to SiC crystal growth was also used for promoting 3C-SiC heteroepitaxy on Si and on α-SiC substrates, the latter case being more successful. The reported modifications and improvements of SiC crystalline and electronic properties by the incorporation of Ge element are discussed in order to draw or clearer picture of SiC:Ge material. Based on such discussion, some short- and long-term perspectives are proposed

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

In Situ Phosphorus Doping of Si and Si<sub>1-x</sub>Ge<sub>x</sub> Epitaxial Layers by RTP/VLP-CVD

Deposition of SiGe alloys by SiH4 and GeH4 CVD reaction

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Raman spectra study of strained SiGe alloys

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Study of GeSi Alloy Deposition on Ge Substrate by Very Low-Pressure Chemical Vapor Deposition

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Defects and Strain in Ge x Si 1−x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

Heteroepitaxial Growth of GexSi1-x Strained Layer on Si by RRH/VLP-CVD

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Doping properties of the Ion-Beam-Sputtered SiGe Film

Influence of H2 on Ge Surface Segregation in Si/SiGe Heterostructures Grown by RTP/VLP-CVD

Growth and doping of silicon carbide with germanium: a review