Abstract:Epitaxial growth of Si/SiGe from hydride precursors has been well established as the preferred technique for preparation of ‘virtual substrate’ and active layers of heterojunction metal-oxide-semiconductor devices as well as other Si/SiGe heterojunction based device structures. This paper reviews briefly the role of hydrogen in the growth mechanisms and establishes the basic reaction pathways in the growth process. The surface related segregation of Ge and As are examined in the context of formation of sharp SiGe/Si heterojunctions and sharp doping profiles. The influence of the growth environment on these surface segregation processes are revealed by the extended rate equation based ‘two-site’ exchange model. The optimisation of growth conditions are clearly identified from the trend gathered from secondary ion mass spectrometry measurements. The strain relaxation process during the growth of virtual substrates often leads to bunching and a high density of threading dislocations and requires substantially thicker grading layers. Some preliminary work shows that incorporation of ‘stresser’ layers in the grading region substantially reduces these detrimental features enabling relatively thin grading layers to be used.

Influence of H2 on Ge Surface Segregation in Si/SiGe Heterostructures Grown by RTP/VLP-CVD

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Ge Segregation in Si1- x Gex Alloy Grown on Si by UHV/CVD

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

Study of Si and Ge growth on Si(100) surface

Effect of H2 on low temperature selective growth of Si1-xGex by UHV/CVD

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Raman spectra study of strained SiGe alloys

Deposition of SiGe alloys by SiH4 and GeH4 CVD reaction

Modeling of Ge surface segregation in vapor-phase deposited Si1−xGex thin films

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

Dynamics and surface segregation during GSMBE of Si1−yCy and Si1−x−yGexCy on the Si(0 0 1) surface