Abstract:Reflectance anisotropy (RA) and reflection high energy electron diffraction (RHEED) were used simultaneously to study the growth of Si and SiGe on Si(001) surfaces by gas-source molecular beam epitaxy (GSMBE). These surfaces are dimerised and have a domain structure created by the orthogonal alignment of dimers on terraces separated in height by a04. Comparison between the RA and RHEED measurements reveals the origin of dynamic changes in the RA response to be the periodic changes in domain coverages on singular surfaces caused by growth under a monolayer-by-monolayer mode. It also demonstrates that RA is a more direct measure of domain coverage variations on the Si(001) surface compared with RHEED, which may suffer from effects of ordering and multiple scattering. The RA technique is used to investigate domain coverage variations as a function of temperature and following growth interruption. It is shown that there is no significant change in the domain coverage at 600°C during growth interruption, consistent with Monte Carlo simulation. This is despite the occurrence of migration of adatoms/islands as indicated by the recovery of specular beam intensity during simultaneous RHEED measurements. The temperature dependence of the dynamic change in RA response is interpreted as a growth mode change at high temperatures and change in the electronic configuration of the dimers due to chemisorbed hydrogen at low temperatures. The changes in the RA response during deposition of SiGe are also investigated as a function of Ge concentration at 600°C growth temperature.

RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

A Study of Rheed Pattern from the Epitaxial Growth of Si-Ge Crystal

Modeling of Ge surface segregation in vapor-phase deposited Si1−xGex thin films

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Interface and Surface Segregation of Germanium in the Sige Semiconductor

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (001)

Monte Carlo Modeling of Ge Surface Segreation in Si1-xGex Thin Films

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Optical Second Harmonic Generation Studies of Epitaxial Growth of Si and SiGe

The development of RAS and RHEED as in situ probes to monitor dopant segregation in GS-MBE on Si (0 0 1)

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

In-situ Monitoring of Si and SiGe Growth on Si(001) Surfaces During Gas-Source Molecular Beam Epitaxy Using Reflectance Anisotropy

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition

Single Adatom Site Exchange During the Ge Growth on Group V Element Covered Si(001)

Influence of H2 on Ge Surface Segregation in Si/SiGe Heterostructures Grown by RTP/VLP-CVD

Ge-H Empirical Potential and Simulation of Si Epitaxy on Ge(100) by Chemical Vapor Deposition from Sih4