Abstract:We present first-principles total-energy electronic-structure calculations that provide the microscopic mechanism of the adatom interchange reaction on the Sn- and Pb-covered Ge(111)-(2x8) and the Sb-covered Si(111)-(7x7) surfaces with and without the tip of the atomic force microscope (AFM). We find that, without the presence of the AFM tip on the Ge surface, the adatom interchange occurs through the migration of the adatom, the spontaneous formation of the dimer structures of the two adatoms, the dimer-dimer structural transitions that induce the exchange of the positions of the two adatoms, and then the backward migration of the adatom. We also find that the dimer structure is unfeasible at room temperature on the Si surface and the adatom interchange are hereby unlikely. With the presence of the tip, we find that the reaction pathways are essentially the same for the Ge surface but that the energy barriers of the migration and the exchange processes are substantially reduced by the AFM tip. We further find that the AFM tip induces the spontaneous formation of the dimer structure even on the Si surface, hereby opening a channel of the interchange of the adatoms. Our calculations show that the bond formation between the AFM tip atom and the surface adatom is essential for the atom manipulation using the AFM tip.

Single Adatom Site Exchange During the Ge Growth on Group V Element Covered Si(001)

Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

Dimer-breaking-assisted Exchange Mechanism in Surfactant-Mediated Epitaxial Growth of Ge on Si(001):Ab Initiototal Energy Calculations

Study of Si and Ge growth on Si(100) surface

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

The difference between Si and Ge(001) surfaces in the initial stages of growth

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

Complex-Temperature Properties of the Ising Model on 2D Heteropolygonal Lattices

Surfactant Influence on the Ge Heteroepilayer on Si(0 0 1) Studied by X-ray Diffraction and Atomic Force Microscopy

Dynamics and surface segregation during GSMBE of Si1−yCy and Si1−x−yGexCy on the Si(0 0 1) surface

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Multi-step atomic reaction enhanced by an atomic force microscope probe on Si(111) and Ge(111) surfaces

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films