Abstract:We investigate the effect of surface reconstruction and strain on diffusion of adsorbed Ge atoms on Ge$(111)\textrm{-}5\times5$ and Ge$(111)\textrm{-}7\times7$ surfaces by means of first principles calculations. Stable adsorption sites, their energies, diffusion paths, and corresponding activation barriers are reported. We demonstrate that the decisive migration path is located near the corner holes of surface structures, and they are associated with formation of weak bonds between the adsorbed Ge atom and surface dimers (within the $5\times5$ or $7\times7$ structures). The results show that Ge diffusion rates on $5\times5$ and $7\times7$ reconstructed Ge$(111)$ surfaces should be similar. Conversely, the diffusion barrier on a compressively strained Ge$(111)$ surface is considerably higher than that on a strain-free surface, thus explaining previous experimental results. Comparable diffusion rates on $5\times5$ and $7\times7$ reconstructed surfaces are explained by the identical local atomic arrangements of these structures. The increase of the migration barrier on a strained surface is explained by dimer bond strengthening upon surface compression, along with a weakening of bonds between the adsorbed Ge and dimer atoms.

Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Strain Effect on the Diffusion of Interstitial Mn in Gaas

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Impact of strain and surface reconstruction on long-range diffusion of Ge atoms on Ge(111) surface

Strain in heteroepitaxial growth

Single Adatom Site Exchange During the Ge Growth on Group V Element Covered Si(001)

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Compressive and Tensile Strain Effects on Atomic Distribution in Strained Si-Ge Alloys

Effect of Strain on the Energetics and Kinetics of Dissociation of Sb-4 on Ge(001)

Simple Generic Method for Predicting the Effect of Strain on Surface Diffusion

Strain study of partially relaxed Ge epilayers on Si (100) substrate

The stability of strained H:Si(105) and H:Ge(105) surfaces

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Lattice-Dynamics Of Strained Si/Ge Superlattices

Strains in Si Substrate Induced by Formation of Ge Islands

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE