Lattice-Dynamics Of Strained Si/Ge Superlattices

J Zi,Km Zhang,Xd Xie

DOI: https://doi.org/10.1088/0256-307X/7/5/011

1990-01-01

Chinese Physics Letters

Abstract:Lattice dynamics of strained (Si)4/(Ge)4 superlattice grown pseudomorphically on (001)-oriented Si1-xGex (0 ⩽ x ⩽ 1) substrate is investigated. In the present calculations, the effects of strain and substrate are discussed.

What problem does this paper attempt to address?

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

J ZI,KM ZHANG,XD XIE

DOI: https://doi.org/10.1063/1.103972

IF: 4

1990-01-01

Applied Physics Letters

Abstract:The geometry structures of strained (Si)n/(Ge)n (1≤n≤6) superlattices grown pseudomorphically on (001) oriented Si1−xGex (0≤x≤1) substrates are studied. The calculations indicate that with proper choice of the Ge composition factor x symmetrically strained superlattices can be approximately obtained, which might render the growth of a superlattice with larger thickness possible.
Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

DL SHEN,F LU,KM ZHANG,XD XIE

DOI: https://doi.org/10.1063/1.99093

IF: 4

1988-01-01

Applied Physics Letters

Abstract:Electronic structures of strained monolayer superlattices (Si)1/(Si1−xGex)1 are calculated within the tight-binding scheme by taking into consideration the effect of stress on atomic interactions. Gap variations with composition and band offsets for different strain conditions are obtained. When Si(Ge) is grown on cubic Ge(Si) with stress to match the lattice constant of the substrates, the calculated nonmonotonic behavior of the superlattice Eg(x) curve can be attributed to a similar phenomenon of the bulk alloy under the same strain. The energy band of the monolayer Si/Ge shows the zinc blende symmetry with a Si-like feature. Starting with the virtual crystal approximation for the calculation of gap and density of states, it is found that further modification using coherent potential approximation is not very significant.
GEOMETRICAL CONFIGURATIONS OF (si)n/(ge)n SUPERLATTICES

ZI JIAN,ZHANG KAI-MING

DOI: https://doi.org/10.7498/aps.39.1640

IF: 0.906

1990-01-01

Acta Physica Sinica

Abstract:The geometrical configurations of (100)-oriented (Si)n/(Ge)n (n = 1-6) strained superlat-tices on Si1-xGex(x = 0-1) substrates are calculated by using Keating model. The influence of substrate on the growth of the superlattices is discussed. The calculations indicate that proper choice of substrate Si1-xGex is beneficial to the growth of (Si)n/(Ge)n superlattices.
Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Xide Xie,Dingli Shen,Kaiming Zhang

DOI: https://doi.org/10.1007/978-3-642-74218-7_34

1988-01-01

Abstract:The empirical tight-binding method is used to calculate the electronic structures of type-II strained layer superlattices (Si)m/ (Si1−xGex)m(100) with m = 1 and m = 2n (n=1−10). Band folding is found to play an important role for the Si-like characteristics of strained Si/Ge, particularly for the quasi-direct gap of (Si)2n/(Ge)2n when n>5. The electronic property of the strained monolayer (Si)1/(SiGe)1 is an intermediate case between that of the bulk zincblende semiconductor and the ordinary semiconductor superlattices.
BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

QIAO HAO,ZI JIAN,XU ZHI-ZHONG,ZHANG KAI-MING

DOI: https://doi.org/10.7498/aps.42.1317

IF: 0.906

1993-01-01

Acta Physica Sinica

Abstract:The electronic structures of short period (Si)n/(Ge)m Strainedlayer superlattices (SLS's) are calculated using empirical tight-binding method. The results indicate that due to the zone-folding, only the SLS's with n+m=10 have the posibility to form direct band gap. For SLS's with n+m=10, the type of energy gap is determined by the relative energies of conduction band valleys at Γ, N, and Δ. However, the Ge layers number and the composition of substrate play an important role. For (Si)6/(Ge)4 and (Si)8/(Ge)2 SLS's grown on Si1-xGex substrate, direct or quasidirect band gap could be got for the substrate composition 0.4≤x≤1.0 For (Si)4/(Ge)6, direct gap could be obtained only for 0.3≤x≤0.6, and in (Si)2/(Ge)8 SLS's the gap could not be direct for all substrate composition.
Substrate-induced Phonon Frequency Shifts of (Si)4/(ge)4superlattices

J ZI,K ZHANG,X XIE

DOI: https://doi.org/10.1088/0953-8984/2/10/017

1990-01-01

Journal of Physics Condensed Matter

Abstract:The substrate-induced phonon frequency shifts of strained (Si)4/(Ge)4 superlattices, grown pseudomorphically on a (001)-oriented Si1-xGex(0
Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Xie Xide,Shen Dingli,Zhang Kaiming

DOI: https://doi.org/10.1063/1.99357

IF: 4

1988-01-01

Applied Physics Letters

Abstract:The empirical tight-binding method is used to calculate the electronic structures of type II strained-layer semiconductor superlattices (Si)2n /(Si1−x Gex )2n (100) with n=1–10. The effects of lattice-constant variation on nearest neighbor interactions have been taken into account. The energy gaps and positions of the conduction-band minimum are obtained for various number of layers. The effects of band folding and band discontinuity on the gap of Si/Ge are analyzed. The 2DEG (two-dimensional electron gas) localized in the Si layer can be explained in terms of the change of ΔEc because of structural strain. The strained band agrees quite well with electroreflectance experiment and other calculations. Studies on interface states are also presented.
Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

Gu Binglin,Duan Wenhui,Zhu Jialin,Wang Mingliang

DOI: https://doi.org/10.1088/0256-307X/9/4/009

1992-01-01

Chinese Physics Letters

Abstract:Using the first-principle self-consistent linear-muffin-tin-orbital method within the local density approximation, band structure of (111)-oriented strained-layer SiGe superlattice is studied. Three different ordered arrangements of atom layers (Si-Ge?Si-Ge Si-Si?Ge-Ge and Si?Si-Ge?Ge) are considered. Calculated results indicate that (111)-oriented SiGe strained layer superlattices are semiconductive, with a band gap about 1.0eV. The first two superlattices are indirect band gap semiconductors, and the third one (Si?Si-Ge?Ge) is a direct band gap semiconductor. The influence of strain on the band structure is also investigated.
Lattice Dynamics of Si/Ge (001) Superlattices

Yunsong Mu,Ruibao Tao

DOI: https://doi.org/10.1103/physrevb.42.5875

1990-01-01

Abstract:The phonon dispersion curves of various propagation directions in Si/Ge (001) superlattices of three different symmetry structures are calculated with a microscopic model, which takes into account both the long-range Coulomb interaction and the nearest-neighbor short-range interaction. There exist the Si confined and Ge quasiconfined modes predicted by a one-dimensional model. The longitudinal Raman-active modes which strongly localize at interface appear in the (Si${)}_{3}$/(Ge${)}_{3}$ superlattice. Atom displacements of these modes at point \ensuremath{\Gamma} are given.
Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

ZM Jiang,XM Jiang,WR Jiang,QJ Jia,WL Zheng,DC Qian

DOI: https://doi.org/10.1063/1.126658

IF: 4

2000-01-01

Applied Physics Letters

Abstract:X-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. The lattice parameters parallel and perpendicular to the surface are determined from the grazing angle and ordinary x-ray diffraction spectra. A 1.2% lattice constant expansion parallel to the interface and a 3.1% lattice expansion along the growth direction, as compared with the Si lattice, are found within the Ge dots. Based on the Poisson equation and the Vegard law, the Ge dot should be a partially strain relaxed SiGe alloy with the Ge content of 55%. The composition change in Ge dots is suggested to be caused by the atomic intermixing during the islanding growth. In the small grazing angle x-ray diffraction spectrum, a peak located at the higher angle side of Si(220) is observed. The origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain is induced by the formation of Ge dots and leads to a -0.8% lattice constant change parallel to the interface. (C) 2000 American Institute of Physics. [S0003-6951(00)04123-1].
Phonon-Spectra Of Strained Si And Ge

Jian Zi,Kaiming Zhang,Xide Xie

DOI: https://doi.org/10.1103/PhysRevB.45.9447

IF: 3.7

1992-01-01

Physical Review B

Abstract:Phonon spectra of Si and Ge grown pseudomorphically on [001]-oriented Si1-xGex substrates are studied theoretically. In the case of Si or Ge grown on a [001]-oriented substrate, the frequency shift induced by the biaxial strain for the LO-phonon mode is found to be nearly rigid along the [001] direction, whereas for the TO-phonon mode the frequency shift is wave-vector dependent. Frequency shifts of the LA- and TA-phonon modes also show a wave-vector dependence. Raman spectra of strained Si/Ge superlattices are calculated with strained force constants and a good agreement with experimental Raman spectra is obtained.
The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

R ZHANG,YD ZHENG,RL JIANG,LQ HU,PX ZHONG,SD YU,Q LI,D FENG,GX CHEN

DOI: https://doi.org/10.1016/0169-4332(91)90357-p

IF: 6.7

1991-01-01

Applied Surface Science

Abstract:A series ofGeSi/Si strained layer heterostructures grown by rapid radiant heating, very low pressure chemical vapor deposition (RRH/VLP-CVD) on a Si(100) substrate have been studied for the first time. The resultsof XPS and AES studies indicate that the epilayer is a pure GeSi alloy with a homogeneous composition and binding energy values are the same as those of bulk Si and Ge, respectively. The XRD spectra show that the epilayer is a high-quality single crystal with a lattice plane spacing different from that of the bulk GeSi alloy predicted by Vegard's law and from that measured from polycrystalline diffraction. This means that the epilayer is a strained film. The RRH/VLP-CVD method has been developed to growGexSi1−x/Si superattices. The results of XTEM, XRD and Raman measurements show a well-defined periodic structure with strain in both the alloy sublayers and the Si sublayers. This means a high-quality strained layer superlattice has been obtained.
Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Rong Zhang,Youdou Zheng,Shulin Gu,Liqun Hu

DOI: https://doi.org/10.1557/proc-298-145

1993-01-01

Abstract:Raman scattering measurements have been carried out on Si1-x Gex/Si SLS. It is found that the Ge-Ge optic phonon frequency shiit is proportional to strain in the SiGe film, and the Ge-Ge strain shift coefficient is 408cm−1. Based on these study a new method for analyzing the Raman spectra of SiGe/Si SLS has been proposed. Using the new method we can obtain the composition of the alloy sublayers as well as the strain in SLS. The strain distribution in the SiGe/Si SLS has been discussed, and strain in both SiGe and Si sublayers of the SLS have been calculated.
Structural stability of SiGe/Si strained-layer superlattices

Xiaohan Liu,Daming Huang,Donghong Wang,Zuimin Jiang,Xiangjiu Zhang,Xun Wang

1996-01-01

Abstract:The structural thermal stability of SiGe/Si strained-layer superlattices has been investigated by Raman scattering spectroscopy. The quantitative analysis of Raman spectra from folded acoustic phonons and optical phonons in superlattices suggests that the interface width introduced by atom interdiffusion is comparable with the SiGe layer thickness under the condition of 800��C 10-minutes thermal anneal. In contrast, the strain relaxation depending on the growth temperature of the superlattice is only 16% for the sample grown at 400��C under the same annealing condition. It is also observed that the gaps of the folded longitudinal acoustic modes near the Brillouin mini-zone edges shrink with interface width, as predicted by the theoretical calculation.
Strains in Si Substrate Induced by Formation of Ge Islands

WR Jiang,ZM Jiang,B Shi,H Xiong,DZ Hu,DW Gong,YL Fan

DOI: https://doi.org/10.1117/12.408406

2000-01-01

Abstract:Grazing incidence x-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. Deformation strains in the substrate underneath or surrounding the dots induced by formation of Ge quantum dots are investigated. Besides a tensile strain existing underneath the dots, a peak located at the higher angle side of Si(220) or Si(400) is observed for the first time, the origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain corresponds to a -0.8% lattice constant change parallel to the interface.
Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Xun Wang,G. L. Zhou,C. Sheng,M. R. Yu

DOI: https://doi.org/10.1557/proc-220-235

1991-01-01

MRS Proceedings

Abstract:The glancing angle x-ray diffraction spectra of GexSi1−x/Si superlattices grown by MBE under different temperatures are investigated. Three different types of the intensity distributions of diffraction peaks are observed, which are believed to be corresponded with different situations of interfaces. If all the interfaces in superlattice structure are highly flat, up to 17 orders diffraction peaks are identified with their intensities modulated by a periodical envelope function, otherwise the distribution of diffraction intensities follows simply a decaying function. A quantitative analysis using computer simulation based on the modified Bragg's law and the optical multilayer theory is used to derive the structural parameters including the thicknesses of Si and GexSi1−x layers, superlattice period, Ge content x and the degree of interfacial roughness.
Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Jian Zi,Kaiming Zhang,Xide Xie

DOI: https://doi.org/10.1103/physrevb.45.8397

IF: 3.7

1992-01-01

Physical Review B

Abstract:The geometrical structures and phonon spectra of strained \ensuremath{\alpha}-Sn/Ge superlattices grown pseudomorphically on (001)-oriented substrates are studied using a generalized Keating model. It is found that symmetrically strained \ensuremath{\alpha}-Sn/Ge superlattices grown on properly chosen substrates can be approximately achieved, which renders the growth of superlattices with large thickness possible. The general features of phonon spectra are discussed. Ge-like confined LO modes can be well described by the bulk dispersion with the confinement length taken as ${\mathit{d}}_{\mathit{e}\mathit{f}\mathit{f}}$=(n+1)a/4, where n is the number of Ge layers and a/4 is the Ge-Ge interplanar distance. The Sn-like LO modes are resonant and quasiconfined. No interface modes are found in the longitudinal polarization; however, such modes do appear in the transverse polarization around 232 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$.
Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

jian zi,kaiming zhang,xide xie

DOI: https://doi.org/10.1088/0953-8984/3/33/003

1991-01-01

Abstract:Phonon and Raman spectra of strained (Si)n(Ge)m (n + m = 8, 2 less-than-or-equal-to n less-than-or-equal-to 6) super-lattices grown pseudomorphically on a (001)-oriented Si substrate are studied theoretically using a generalized two-parameter Keating model. It is found that the phonon frequencies of Si-like confined longitudinal (LO) modes are well described by the bulk dispersion curves with the effective number of Si layers given by n(eff) = n + 1, whereas for Ge-like longitudinal confined modes the confinement is quite complex because of overlapping of the optical continuum of Ge with the acoustical continuum of Si. Phonon frequency shifts of confined modes due to interface diffusion are discussed within the virtual-crystal approximation.
Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

B Yan,Z Yang,Y Shi,JL Liu,R Zhang,YD Zheng,KL Wang

DOI: https://doi.org/10.1109/sim.2005.1511403

2004-01-01

Abstract:In this paper, the interface structural parameters, mainly roughness and the interdiffusion properties have been investigated in two series of Ge/Si quantum dot superlattices (QDSLs), grown by solid-source molecular beam epitaxy (MBE) on Si (100) substrate with S-K mode at 540 degrees C When the nominal thickness of Ge layer increased from 1.2 to 1.8 nm, the Ge layers get rough and the thickness of Ge layers decreases. With the periods of Ge/Si QDSLs increase, the thicknesses of Ge wetting layers (WLs) tend to be thinner and the roughness of Ge dots' height becomes larger. The composition of the quantum dots (QDs) is also estimated by the integrated peak intensity ratio IGe-Ge/ISi-Ge from Raman spectra. The calculated result of Ge/Si interdiffusion from Raman spectra is in accordance with the analyses results of X-ray Reflection (XRR) experiments.
Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

EG WANG,J ZI,DS WANG

DOI: https://doi.org/10.1088/0953-8984/3/36/003

1991-01-01

Abstract:The stability of (001)- and (111)-oriented (GaP)1/(InP)1 strained-layer superlattices (SLSS) is studied by the Keating model. The obtained deviations of the In-P and Ga-P bond lengths of the (001) stable superlattice structure from the constituent bulk lengths are -1.0% and 0.8%, respectively. A recursion method is used to calculate the bulk and surface electronic structures for both (001) and (111) (GaP)1/(InP)1 SLSS. It is found that the band gaps of the (001) and (111) structures, respectively, are smaller by 0.28 eV and 0.31 eV than the average of those of bulk InP and GaP. From the total-structural-energy and Fermi level calculation, we conclude that the strained-monolayer superlattice growth along the (001) direction is more stable than that along the (111) direction. A qualitative trend is proposed to elucidate the influence of strain on the electronic occupation in a strained-layer superlattice fabricated from III-V semiconductors, with the aid of two auxiliary systems. The localized states of a Si impurity in these systems are calculated.

Lattice-Dynamics Of Strained Si/Ge Superlattices

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

GEOMETRICAL CONFIGURATIONS OF (si)n/(ge)n SUPERLATTICES

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Substrate-induced Phonon Frequency Shifts of (Si)4/(ge)4superlattices

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

Lattice Dynamics of Si/Ge (001) Superlattices

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Phonon-Spectra Of Strained Si And Ge

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Structural stability of SiGe/Si strained-layer superlattices

Strains in Si Substrate Induced by Formation of Ge Islands

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices