Abstract:The geometrical structures and phonon spectra of strained \ensuremath{\alpha}-Sn/Ge superlattices grown pseudomorphically on (001)-oriented substrates are studied using a generalized Keating model. It is found that symmetrically strained \ensuremath{\alpha}-Sn/Ge superlattices grown on properly chosen substrates can be approximately achieved, which renders the growth of superlattices with large thickness possible. The general features of phonon spectra are discussed. Ge-like confined LO modes can be well described by the bulk dispersion with the confinement length taken as ${\mathit{d}}_{\mathit{e}\mathit{f}\mathit{f}}$=(n+1)a/4, where n is the number of Ge layers and a/4 is the Ge-Ge interplanar distance. The Sn-like LO modes are resonant and quasiconfined. No interface modes are found in the longitudinal polarization; however, such modes do appear in the transverse polarization around 232 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$.

Phonon-Spectra Of Strained Si And Ge

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Substrate-induced Phonon Frequency Shifts of (Si)4/(ge)4superlattices

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Effect of Strain on the Lattice Vibrational Properties of PbSe

Vibrational properties of Si/Ge superlattices

Lattice-Dynamics Of Strained Si/Ge Superlattices

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain evaluation in SiGe film grown on substrate

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Lattice Dynamics of Si/Ge (001) Superlattices

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Strains in Si Substrate Induced by Formation of Ge Islands

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Structural stability of SiGe/Si strained-layer superlattices

Influence of GeSi Interfacial Layer on Ge–Ge Optical Phonon Mode in SiO2 Films Embedded with Ge Nanocrystals

Vibrational and Electronic Properties of Strained Α-Sn/ge Superlattices

Optical Phonons in Self-Assembled Ge Quantum Dot Superlattices: Strain Relaxation Effects