Substrate-induced Phonon Frequency Shifts of (Si)4/(ge)4superlattices

J ZI,K ZHANG,X XIE

DOI: https://doi.org/10.1088/0953-8984/2/10/017

1990-01-01

Journal of Physics Condensed Matter

Abstract:The substrate-induced phonon frequency shifts of strained (Si)4/(Ge)4 superlattices, grown pseudomorphically on a (001)-oriented Si1-xGex(0

What problem does this paper attempt to address?

Phonon-Spectra Of Strained Si And Ge

Jian Zi,Kaiming Zhang,Xide Xie

DOI: https://doi.org/10.1103/PhysRevB.45.9447

IF: 3.7

1992-01-01

Physical Review B

Abstract:Phonon spectra of Si and Ge grown pseudomorphically on [001]-oriented Si1-xGex substrates are studied theoretically. In the case of Si or Ge grown on a [001]-oriented substrate, the frequency shift induced by the biaxial strain for the LO-phonon mode is found to be nearly rigid along the [001] direction, whereas for the TO-phonon mode the frequency shift is wave-vector dependent. Frequency shifts of the LA- and TA-phonon modes also show a wave-vector dependence. Raman spectra of strained Si/Ge superlattices are calculated with strained force constants and a good agreement with experimental Raman spectra is obtained.
Lattice-Dynamics Of Strained Si/Ge Superlattices

J Zi,Km Zhang,Xd Xie

DOI: https://doi.org/10.1088/0256-307X/7/5/011

1990-01-01

Chinese Physics Letters

Abstract:Lattice dynamics of strained (Si)4/(Ge)4 superlattice grown pseudomorphically on (001)-oriented Si1-xGex (0 ⩽ x ⩽ 1) substrate is investigated. In the present calculations, the effects of strain and substrate are discussed.
Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

jian zi,kaiming zhang,xide xie

DOI: https://doi.org/10.1088/0953-8984/3/33/003

1991-01-01

Abstract:Phonon and Raman spectra of strained (Si)n(Ge)m (n + m = 8, 2 less-than-or-equal-to n less-than-or-equal-to 6) super-lattices grown pseudomorphically on a (001)-oriented Si substrate are studied theoretically using a generalized two-parameter Keating model. It is found that the phonon frequencies of Si-like confined longitudinal (LO) modes are well described by the bulk dispersion curves with the effective number of Si layers given by n(eff) = n + 1, whereas for Ge-like longitudinal confined modes the confinement is quite complex because of overlapping of the optical continuum of Ge with the acoustical continuum of Si. Phonon frequency shifts of confined modes due to interface diffusion are discussed within the virtual-crystal approximation.
Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Jian Zi,Kaiming Zhang,Xide Xie

DOI: https://doi.org/10.1103/PhysRevB.45.8397

IF: 3.7

1992-01-01

Physical Review B

Abstract:The geometrical structures and phonon spectra of strained alpha-Sn/Ge superlattices grown pseudomorphically on (001)-oriented substrates are studied using a generalized Keating model. It is found that symmetrically strained alpha-Sn/Ge superlattices grown on properly chosen substrates can be approximately achieved, which renders the growth of superlattices with large thickness possible. The general features of phonon spectra are discussed. Ge-like confined LO modes can be well described by the bulk dispersion with the confinement length taken as d(eff) = (n + 1)a/4, where n is the number of Ge layers and a/4 is the Ge-Ge interplanar distance. The Sn-like LO modes are resonant and quasiconfined. No interface modes are found in the longitudinal polarization; however, such modes do appear in the transverse polarization around 232 cm-1.
Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

J ZI,KM ZHANG,XD XIE

DOI: https://doi.org/10.1063/1.103972

IF: 4

1990-01-01

Applied Physics Letters

Abstract:The geometry structures of strained (Si)n/(Ge)n (1≤n≤6) superlattices grown pseudomorphically on (001) oriented Si1−xGex (0≤x≤1) substrates are studied. The calculations indicate that with proper choice of the Ge composition factor x symmetrically strained superlattices can be approximately obtained, which might render the growth of a superlattice with larger thickness possible.
Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

DL SHEN,F LU,KM ZHANG,XD XIE

DOI: https://doi.org/10.1063/1.99093

IF: 4

1988-01-01

Applied Physics Letters

Abstract:Electronic structures of strained monolayer superlattices (Si)1/(Si1−xGex)1 are calculated within the tight-binding scheme by taking into consideration the effect of stress on atomic interactions. Gap variations with composition and band offsets for different strain conditions are obtained. When Si(Ge) is grown on cubic Ge(Si) with stress to match the lattice constant of the substrates, the calculated nonmonotonic behavior of the superlattice Eg(x) curve can be attributed to a similar phenomenon of the bulk alloy under the same strain. The energy band of the monolayer Si/Ge shows the zinc blende symmetry with a Si-like feature. Starting with the virtual crystal approximation for the calculation of gap and density of states, it is found that further modification using coherent potential approximation is not very significant.
Vibrational properties of Si/Ge superlattices

jian zi,zhang kaiming,xie xide

DOI: https://doi.org/10.1016/S0079-6816(97)00002-6

IF: 7.111

1997-01-01

Progress in Surface Science

Abstract:Vibrational properties of Si/Ge superlattices are reviewed. The symmetry, geometrical structures as well as Raman selection rules are discussed. The elastic continuum model for acoustic phonons and the phenomenological model for optical-phonon frequency shift due to strain are presented. The linear-chain model and three-dimensional calculations for phonons are discussed. A, bond-polarizability model for calculations of Raman spectra is presented. Experimental Raman spectra are reviewed and discussed. Effects of alloyed interface layers on both longitudinal and transverse optical phonons are discussed.
Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Jian Zi,Kaiming Zhang,Xide Xie

DOI: https://doi.org/10.1103/physrevb.45.8397

IF: 3.7

1992-01-01

Physical Review B

Abstract:The geometrical structures and phonon spectra of strained \ensuremath{\alpha}-Sn/Ge superlattices grown pseudomorphically on (001)-oriented substrates are studied using a generalized Keating model. It is found that symmetrically strained \ensuremath{\alpha}-Sn/Ge superlattices grown on properly chosen substrates can be approximately achieved, which renders the growth of superlattices with large thickness possible. The general features of phonon spectra are discussed. Ge-like confined LO modes can be well described by the bulk dispersion with the confinement length taken as ${\mathit{d}}_{\mathit{e}\mathit{f}\mathit{f}}$=(n+1)a/4, where n is the number of Ge layers and a/4 is the Ge-Ge interplanar distance. The Sn-like LO modes are resonant and quasiconfined. No interface modes are found in the longitudinal polarization; however, such modes do appear in the transverse polarization around 232 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$.
Lattice Dynamics of Si/Ge (001) Superlattices

Yunsong Mu,Ruibao Tao

DOI: https://doi.org/10.1103/physrevb.42.5875

1990-01-01

Abstract:The phonon dispersion curves of various propagation directions in Si/Ge (001) superlattices of three different symmetry structures are calculated with a microscopic model, which takes into account both the long-range Coulomb interaction and the nearest-neighbor short-range interaction. There exist the Si confined and Ge quasiconfined modes predicted by a one-dimensional model. The longitudinal Raman-active modes which strongly localize at interface appear in the (Si${)}_{3}$/(Ge${)}_{3}$ superlattice. Atom displacements of these modes at point \ensuremath{\Gamma} are given.
Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Z Yang,Y Shi,JL Liu,B Yan,ZX Huang,L Pu,YD Zheng,KL Wang

DOI: https://doi.org/10.1088/0256-307x/20/11/028

2003-01-01

Abstract:Raman scattering measurements were carried out in self-assembled Ge quantum dot superlattices grown by molecular beam epitaxy. The characteristics of the Ge-Ge, Si-Ge, Si-Si-LOC and Si-Si peaks were investigated, especially the Ge-Ge optical phonon frequency shift was emphasized, which was tuned by the phonon confinement and strain effects. The experimentally observed frequency shift values of the Ge-Ge peak frequency caused by optical phonon confinement and strain in Ge quantum dots were discussed with quantitative calculations.
Suppression of Si-Ge Interfacial Vibration Mode in the Raman Spectrum of A Si6ge4 Superlattice

C Sheng,TC Zhou,Q Cai,DaweiGong,MR Yu,XJ Zhang,X Wang

DOI: https://doi.org/10.1103/physrevb.53.10771

1996-01-01

Abstract:A thin SiGe buffer layer grown on a Ge-island-decorated Si(100) surface has been prepared and used as the substrate for growing the Si6Ge4 short-period superlattice with symmetrically distributed built-in strains. The Si/Ge superlattice is found to be free of threading dislocations, which is in favor of suppressing the intermixing of Ge and Si atoms at the superlattice interfaces. The Raman spectrum shows a very weak Si-Ge vibration mode, narrow peak widths of the Ge-Ge and Si-Si modes, and the disappearance of the Si optical-phonon mode from the substrate, which are indicative of the great improvement of the interfacial quality.
Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

J HE,J SAPRIEL,R AZOULAY

DOI: https://doi.org/10.1103/physrevb.40.1121

1989-01-01

Abstract:The effects of acoustical attenuation and optical absorption on light scattering by acoustic phonons propagating along the superlattice axis are theoretically analyzed and experimentally probed in GaAs/AlAs and Si/${\mathrm{Si}}_{0.5}$${\mathrm{Ge}}_{0.5}$ superlattices. It is shown that the linewidth of the acoustic modes undergoes a clear narrowing near the Brillouin-zone edge due to the decrease of the group velocity of the phonons. It is also demonstrated that the damping of the acoustic waves makes the high-frequency modes at the Brillouin-zone edge shift into the ``forbidden gaps'' which have been evidenced in the case of lossless media. We have observed such a shift in a Si/${\mathrm{Si}}_{0.5}$${\mathrm{Ge}}_{0.5}$ superlattice sample at phonon energies around 14 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ for which the acoustic attenuation can no longer be neglected. It is also shown that the effects of optical absorption on the relative intensity of the folded acoustic modes are particularly sensitive in the condition where the incident light is Bragg reflected by the interfaces. This intensity behavior has been observed in a GaAs/AlAs superlattice and agrees with the theoretical analysis.
Strains in Si Substrate Induced by Formation of Ge Islands

WR Jiang,ZM Jiang,B Shi,H Xiong,DZ Hu,DW Gong,YL Fan

DOI: https://doi.org/10.1117/12.408406

2000-01-01

Abstract:Grazing incidence x-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. Deformation strains in the substrate underneath or surrounding the dots induced by formation of Ge quantum dots are investigated. Besides a tensile strain existing underneath the dots, a peak located at the higher angle side of Si(220) or Si(400) is observed for the first time, the origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain corresponds to a -0.8% lattice constant change parallel to the interface.
Structural stability of SiGe/Si strained-layer superlattices

Xiaohan Liu,Daming Huang,Donghong Wang,Zuimin Jiang,Xiangjiu Zhang,Xun Wang

1996-01-01

Abstract:The structural thermal stability of SiGe/Si strained-layer superlattices has been investigated by Raman scattering spectroscopy. The quantitative analysis of Raman spectra from folded acoustic phonons and optical phonons in superlattices suggests that the interface width introduced by atom interdiffusion is comparable with the SiGe layer thickness under the condition of 800��C 10-minutes thermal anneal. In contrast, the strain relaxation depending on the growth temperature of the superlattice is only 16% for the sample grown at 400��C under the same annealing condition. It is also observed that the gaps of the folded longitudinal acoustic modes near the Brillouin mini-zone edges shrink with interface width, as predicted by the theoretical calculation.
Vibrational and Electronic Properties of Strained Α-Sn/ge Superlattices

J ZI,H QIAO,KM ZHANG,XD XIE

DOI: https://doi.org/10.1016/0749-6036(92)90232-t

IF: 3.22

1992-01-01

Superlattices and Microstructures

Abstract:Phonon spectra of strained α-Sn/Ge superlattices are studied using a generalized Keating model. General features of phonons are discussed. Effects of interface intermixing on Raman spectra are investigated by a supercell calculation. In addition, electronic band structures are calculated by a tight-binding method.
Optical properties of Ge/Si quantum dot superlattices

Zheng Yang,Yi Shi,Jianlin Liu,Bo Yan,Rong Zhang,Youdou Zheng,Kanglong Wang

DOI: https://doi.org/10.1016/j.matlet.2004.08.016

IF: 3

2004-01-01

Materials Letters

Abstract:Self-assembled Ge/Si quantum dot (QD) superlattices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.
Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

J ZI,W LUDWIG,KM ZHANG,X XIE

DOI: https://doi.org/10.1103/physrevb.51.7886

1995-01-01

Abstract:By means of a supercell technique, the Raman spectra of Si/Ge superlattices with alloyed interfaces are calculated. The appearance of the Si-Ge LO peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, observed in Raman experiments, is found to originate from the formation of interface SiGe alloys. For two transverse polarizations the so-called interface modes are affected by the interface alloyed layers in different ways: For the perfect interfaces there is a Raman peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ for one transverse polarization due to the contribution from the interface mode. No Raman peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ exists in another transverse polarization. With the introduction of interface alloying, the 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ Raman peak existing for perfect interfaces decreases its intensity, while a Raman peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ appears in that polarization in which there is no peak in the case of perfect interfaces.
Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Rong Zhang,Youdou Zheng,Shulin Gu,Liqun Hu

DOI: https://doi.org/10.1557/proc-298-145

1993-01-01

Abstract:Raman scattering measurements have been carried out on Si1-x Gex/Si SLS. It is found that the Ge-Ge optic phonon frequency shiit is proportional to strain in the SiGe film, and the Ge-Ge strain shift coefficient is 408cm−1. Based on these study a new method for analyzing the Raman spectra of SiGe/Si SLS has been proposed. Using the new method we can obtain the composition of the alloy sublayers as well as the strain in SLS. The strain distribution in the SiGe/Si SLS has been discussed, and strain in both SiGe and Si sublayers of the SLS have been calculated.
BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

QIAO HAO,ZI JIAN,XU ZHI-ZHONG,ZHANG KAI-MING

DOI: https://doi.org/10.7498/aps.42.1317

IF: 0.906

1993-01-01

Acta Physica Sinica

Abstract:The electronic structures of short period (Si)n/(Ge)m Strainedlayer superlattices (SLS's) are calculated using empirical tight-binding method. The results indicate that due to the zone-folding, only the SLS's with n+m=10 have the posibility to form direct band gap. For SLS's with n+m=10, the type of energy gap is determined by the relative energies of conduction band valleys at Γ, N, and Δ. However, the Ge layers number and the composition of substrate play an important role. For (Si)6/(Ge)4 and (Si)8/(Ge)2 SLS's grown on Si1-xGex substrate, direct or quasidirect band gap could be got for the substrate composition 0.4≤x≤1.0 For (Si)4/(Ge)6, direct gap could be obtained only for 0.3≤x≤0.6, and in (Si)2/(Ge)8 SLS's the gap could not be direct for all substrate composition.
Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals

L. Z. Liu,X. L. Wu,Y. M. Yang,T. H. Li,Paul K. Chu

DOI: https://doi.org/10.1007/s00339-011-6333-0

2011-01-01

Abstract:Raman spectra acquired from Si x Ge1−x -nanocrystal-embedded SiO2 films show dependence of the Si–Si optical phonon frequency on Si content. The frequency upshifts, and peak intensity increases as the silicon concentration increases. For a given Si content, the frequency remains unchanged with annealing temperature. Spectral analysis and density functional theory calculation reveal that the optical Si–Si phonon is related to the formation of localized Si clusters surrounded by Si/Ge atomic layers in the Si x Ge1−x nanocrystals and the intensity enhancement arises from the larger cluster size. The synergetic effect of surface tensile stress and phonon confinement determines the Si–Si optical phonon behavior.

Substrate-induced Phonon Frequency Shifts of (Si)4/(ge)4superlattices

Phonon-Spectra Of Strained Si And Ge

Lattice-Dynamics Of Strained Si/Ge Superlattices

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Vibrational properties of Si/Ge superlattices

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Lattice Dynamics of Si/Ge (001) Superlattices

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Suppression of Si-Ge Interfacial Vibration Mode in the Raman Spectrum of A Si6ge4 Superlattice

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Strains in Si Substrate Induced by Formation of Ge Islands

Structural stability of SiGe/Si strained-layer superlattices

Vibrational and Electronic Properties of Strained Α-Sn/ge Superlattices

Optical properties of Ge/Si quantum dot superlattices

Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals