Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

J ZI,W LUDWIG,KM ZHANG,X XIE
DOI: https://doi.org/10.1103/physrevb.51.7886
1995-01-01
Abstract:By means of a supercell technique, the Raman spectra of Si/Ge superlattices with alloyed interfaces are calculated. The appearance of the Si-Ge LO peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, observed in Raman experiments, is found to originate from the formation of interface SiGe alloys. For two transverse polarizations the so-called interface modes are affected by the interface alloyed layers in different ways: For the perfect interfaces there is a Raman peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ for one transverse polarization due to the contribution from the interface mode. No Raman peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ exists in another transverse polarization. With the introduction of interface alloying, the 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ Raman peak existing for perfect interfaces decreases its intensity, while a Raman peak around 400 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ appears in that polarization in which there is no peak in the case of perfect interfaces.
What problem does this paper attempt to address?