Abstract:A new type of two-dimensional layered semiconductor with weak electrostatic but not van der Waals interlayer interactions, Bi2O2Se, has been recently synthesized, which shown excellent air stability and ultrahigh carrier mobility. Herein, we combined theoretical and experimental approaches to study the Raman spectra of Bi2O2Se and related bismuth oxychalcogenides (Bi2O2Te and Bi2O2S). The experimental peaks were fully consistent with the calculated results, and were successfully assigned. Bi2O2S was predicted to have more Raman-active modes due to its lower symmetry. The shift of the predicted frequencies of Raman active modes was also found to get softened as the interlayer interaction decreases from bulk to monolayer Bi2O2Se and Bi2O2Te. To reveal the strain effects on the Raman shifts, a universal theoretical equation was established based on the symmetry of Bi2O2Se and Bi2O2Te. It was predicted that the doubly degenerate modes split under in-plane uniaxial/shear strains. Under a rotated uniaxial strain, the changes of Raman shifts are anisotropic for degenerate modes although Bi2O2Se and Bi2O2Te were usually regarded as isotropic systems similar to graphene. This implies a novel method to identify the crystallographic orientation from Raman spectra under strain. These results have important consequences for the incorporation of 2D Bismuth oxychalcogenides into nanoelectronic devices.

Raman Spectra As A Measure of Interface Alloying for Iv/Iv Superlattices

Vibrational Properties of Si/Ge and Α-Sn/ge Superlattices with Intermixed Interfaces

Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Vibrational and Electronic Properties of Strained Α-Sn/ge Superlattices

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

Vibrational properties of Si/Ge superlattices

Raman spectra study of strained SiGe alloys

Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices

Lattice Dynamics of Si/Ge (001) Superlattices

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Suppression of Si-Ge Interfacial Vibration Mode in the Raman Spectrum of A Si6ge4 Superlattice

Interface Layers in In0.532ga0.468as/Inp Superlattices

Structural stability of SiGe/Si strained-layer superlattices

Raman-Spectra of Znse-Znte Strained-Layer Superlattice

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Experimental Characterization and First-Principles Calculations of Zn Segregation at the Β″-Mg5al2si4/al Interfaces in Al-Mg-Si Alloys

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Raman Spectra of Zn1-Xmgxsyse1-Y Quaternary Alloys