Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

jian zi,kaiming zhang,xide xie
DOI: https://doi.org/10.1088/0953-8984/3/33/003
1991-01-01
Abstract:Phonon and Raman spectra of strained (Si)n(Ge)m (n + m = 8, 2 less-than-or-equal-to n less-than-or-equal-to 6) super-lattices grown pseudomorphically on a (001)-oriented Si substrate are studied theoretically using a generalized two-parameter Keating model. It is found that the phonon frequencies of Si-like confined longitudinal (LO) modes are well described by the bulk dispersion curves with the effective number of Si layers given by n(eff) = n + 1, whereas for Ge-like longitudinal confined modes the confinement is quite complex because of overlapping of the optical continuum of Ge with the acoustical continuum of Si. Phonon frequency shifts of confined modes due to interface diffusion are discussed within the virtual-crystal approximation.
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