Abstract:We propose a (three-dimension) -> (one-dimension) shift of paradigm for basic understanding of Raman spectra of random Si-Ge. Fair contour modeling of Raman spectra is achieved along the linear chain approximation via 1D-cluster version of the phenomenological Percolation scheme, originally developed for zincblende alloys, after ab initio calibration of the intrinsic Si-Si, Ge-Ge and Si-Ge Raman efficiencies. The 1D-cluster scheme introduces a seven-oscillator [1x(Ge-Ge), 4x(Si-Ge), 2x(Si-Si)] Raman behavior for SiGe, which considerably deviates from the currently admitted six-oscillator [1x(Ge-Ge), 1x(Si-Ge), 4x(Si-Si)] one. The 1D-cluster re-assignment of Raman lines is based on remarkable intensity-interplays with composition, known from the literature, but so far not properly understood. It is independently supported by ab initio calculation of the frequencies of bond-stretching modes along prototype impurity motifs taken as quasi-linear. Different numbers of Raman modes per bond indicate different sensitivities to the local environment of the Ge-Ge (insensitive), Si-Si (sensitive to 1st neighbors) and Si-Ge (sensitive to 2nd neighbors) bond-stretchings. Last, we compare the SiGe Percolation scheme with the current version for zincblende alloys, using GaAsP as a natural reference. The SiGe vs. GaAsP comparison is supported by ab initio calculation of local lattice relaxation/dynamics related to prototype impurity motifs that are directly transposable to the two crystal structures.

Vibrational Properties of Si/Ge and Α-Sn/ge Superlattices with Intermixed Interfaces

Raman Spectra As A Measure of Interface Alloying for Iv/Iv Superlattices

Interface Alloying Effects on the LO and TO Phonons in Si/Ge Superlattices.

Vibrational properties of Si/Ge superlattices

Vibrational and Electronic Properties of Strained Α-Sn/ge Superlattices

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Suppression of Si-Ge Interfacial Vibration Mode in the Raman Spectrum of A Si6ge4 Superlattice

Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Lattice Dynamics of Si/Ge (001) Superlattices

Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Optical properties of Ge/Si quantum dot superlattices

Re-examination of the SiGe Raman spectra - Linear chain approximation and ab initio calculations