Abstract:Carbon-based novel low-dimensional XC/YC (with X, Y ≡ Si, Ge, and Sn) heterostructures have recently gained considerable scientific and technological interest in the design of electronic devices for energy transport use in extreme environments. Despite many efforts made to understand the structural, electronic, and vibrational properties of XC and XxY1−xC alloys, no measurements exist for identifying the phonon characteristics of superlattices (SLs) by employing either an infrared and/or Raman scattering spectroscopy. In this work, we report the results of a systematic study to investigate the lattice dynamics of the ideal / as well as graded SLs by meticulously including the interfacial layer thickness (≡1–3 monolayers). While the folded acoustic phonons (FAPs) are calculated using a Rytov model, the confined optical modes (COMs) and FAPs are described by adopting a modified linear-chain model. Although the simulations of low-energy dispersions for the FAPs indicated no significant changes by increasing , the results revealed, however, considerable "downward" shifts of high frequency COMs and "upward" shifts for the low energy optical modes. In the framework of a bond polarizability model, the calculated results of Raman scattering spectra for graded SLs are presented as a function of Special attention is paid to those modes in the middle of the frequency region, which offer strong contributions for enhancing the Raman intensity profiles. These simulated changes are linked to the localization of atomic displacements constrained either by the XC/YC or YC/XC unabrupt interfaces. We strongly feel that this study will encourage spectroscopists to perform Raman scattering measurements to check our theoretical conjectures.

Vibrational and Electronic Properties of Strained Α-Sn/ge Superlattices

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Vibrational properties of Si/Ge superlattices

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Electric fields and valence band offsets at strained [111] heterojunctions

Vibrational Properties of Si/Ge and Α-Sn/ge Superlattices with Intermixed Interfaces

Raman Spectra As A Measure of Interface Alloying for Iv/Iv Superlattices

Strain Effects in Superlattices of Diluted Magnetic Semiconductor ZnTe/Zn1-xMnxTe

Raman-Spectra of Znse-Znte Strained-Layer Superlattice

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Structural stability of SiGe/Si strained-layer superlattices

The optical and spectroscopic properties of II–VI wide-gap ZnSe/ZnS and ZnSe/ZnTe strained-layer superlattices

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model

Molecular beam epitaxy and optical properties of Zn1-xMnxSe/ZnSe strained-layer superlattices

Phonon-Spectra Of Strained Si And Ge

Contribution of Strain-Induced Modulation to the Sound Velocity in Lattice-Mismatched Quasiperiodic Superlattices

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Interface Broadening And Raman Scattering In Si1-Xgex/Si Superlattices

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices