Abstract:The stability of (001)- and (111)-oriented (GaP)1/(InP)1 strained-layer superlattices (SLSS) is studied by the Keating model. The obtained deviations of the In-P and Ga-P bond lengths of the (001) stable superlattice structure from the constituent bulk lengths are -1.0% and 0.8%, respectively. A recursion method is used to calculate the bulk and surface electronic structures for both (001) and (111) (GaP)1/(InP)1 SLSS. It is found that the band gaps of the (001) and (111) structures, respectively, are smaller by 0.28 eV and 0.31 eV than the average of those of bulk InP and GaP. From the total-structural-energy and Fermi level calculation, we conclude that the strained-monolayer superlattice growth along the (001) direction is more stable than that along the (111) direction. A qualitative trend is proposed to elucidate the influence of strain on the electronic occupation in a strained-layer superlattice fabricated from III-V semiconductors, with the aid of two auxiliary systems. The localized states of a Si impurity in these systems are calculated.

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Lattice-Dynamics Of Strained Si/Ge Superlattices

GEOMETRICAL CONFIGURATIONS OF (si)n/(ge)n SUPERLATTICES

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Structural stability of SiGe/Si strained-layer superlattices

Study of Si and Ge growth on Si(100) surface

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Molecular beam epitaxy and characterization of Zn1-xMnxSe/ZnSe superlattices on (100) GaAs substrates

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices