Abstract:In this work we systematically investigate the impact of lateral strain on the electronic structure and optical properties of monolayer indium selenide (InSe) and its atomic origin with density functional theory, tightbinding models and many-particle perturbation theory. Free-standing InSe has an indirect band gap due to its special bonding nature. Compressive strain enhances the coupling between Se 4p(x)/4p(y) states more significantly than Se 4p(z) states, eventually reordering the valence bands and converting the band gap from indirect to direct. The selection rules in single-particle regime are still valid when electron-hole interaction is included. The lowest exciton is active under vertically polarized light for free-standing InSe with a low transition matrix element. Under compressive strain the lowest exciton becomes active under lateral polarization and its transition matrix element increases significantly, indicating improvement of the photoluminescence performance. This study provides thorough understanding into the impact of strain as well as guides to tailor the electronic structure and optical properties of monolayer InSe.

Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electric fields and valence band offsets at strained [111] heterojunctions

Lattice-Dynamics Of Strained Si/Ge Superlattices

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Electronic Phase Diagram of Single-Element Silicon “strain” Superlattices

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Structural stability of SiGe/Si strained-layer superlattices

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Strained Α-Sn/ge Superlattices: Geometrical Structures and Phonon Spectra

GEOMETRICAL CONFIGURATIONS OF (si)n/(ge)n SUPERLATTICES

Lattice Dynamics of Si/Ge (001) Superlattices

First-principles study of structural stability and electronic properties of Sb/GaSb(111) semimetal–semiconductor superlattice

Vibrational and Electronic Properties of Strained Α-Sn/ge Superlattices

Strained Alpha-Sn/Ge Superlattices - Geometrical Structures And Phonon-Spectra

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys