Abstract:The importance of silicon in modern electronic devices has led to considerable interest in exploring the unconventional electronic properties of Si-based materials for future applications in spintronics and quantum computing. Here, using density functional theory, we present the results of a systematic study of the effect of strain on Si(111) thin films whose surfaces are functionalized with iodine. Films with an odd number of layers under biaxial strain are found to undergo a phase transition from a normal insulator to a topological insulator and ultimately to a metal. The spin-orbit coupling-induced topologically nontrivial band gap at the Γ point is found to be as large as 0.50 eV, which not only surpasses that of other Si-based topological materials, it is also large enough for practical realization of quantum spin Hall states at room temperature. No such nontrivial states are found in films with an even number of layers. Mechanisms for such a strain-induced transition are illustrated by a tight-binding model composed of s, px, and py orbitals. Equally important, we predict that iodized silicene, when stretched and hole-doped, would be a phonon-mediated superconductor with a critical temperature of 9.2 K. This coexistence of a topological insulator and a superconducting phase in a single material is unusual; it has the potential for applications in electronic circuits and for the realization of Majorana fermions in quantum computations.

Electronic Phase Diagram of Single-Element Silicon “strain” Superlattices

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Electric fields and valence band offsets at strained [111] heterojunctions

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Strain and Carrier-Induced Coexistence of Topologically Insulating and Superconducting Phase in Iodized Si(111) Films

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Strain Induced Phase Transitions in Silicene Bilayers: a First Principles and Tight-Binding Study

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Strain-controlled Valley and Spin Separation in Silicene Heterojunctions

Influence of strain on the conduction band structure of strained silicon nanomembranes

First-principles calculations of mechanical and electronic properties of silicene under strain

Influence of strain and electric field on the properties of silicane

Strain Modulated Electronic Properties of Silicon Nanoribbons with Armchair Edges

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Strain-induced energy band gap opening in two-dimensional bilayered silicon film

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Manipulating Topological Phase Transition by Strain.