Abstract:We carry out both the tight-binding model and the $ab\ initio$ to study the layered silicene, the spin, valley, sublattice degrees of freedom are taken into consider and the effects of electric field, magnetic field, and even the light in finite frequency together with its interesting optical propertice, which are all closely related to the spin-orbit coupling and Rashba coupling and lead to the tunable phase transitions (between the nontrivial topological phase which has nonzero Chern number or nonzero spin Chern number and the trivial phase). An exotic quantum anomalous Hall insulator phase are found which has nonzero spin Chern number and nonzero valley Chern number and as a giant-application-potential spintronic and valleytronics in the two-ternimate devices based on the monolayer silicene for the information transmission. In fact, the gap-out action can be understanded by analyse the Dirac mass as well as the Zeeman splitting or the external-field-induced symmetry-broken, and the changes of gap has a general nonmonotone-variation characteristic under both the effects of electron filed-induced Rashba-coupling $R_{2}(E_{\perp})$ and the electron field-induced band gap, and the band inversion related to the spin-orbit coupling which absorbs both the spin and orbital angular of momentum may happen during this process. The quantized Hall/longitudinal conductivity together with the optical conductivity are also explored, we see that even in the quantum spin Hall phase without any magnetic field, the two-terminate conductivity can be reduced to the value $e^{2}/h$ by controlling the helical edge model, and it can be further reduced to $e^{2}/2h$ by applying the magnetic field which similar to the graphene.

Strain Induced Phase Transitions in Silicene Bilayers: a First Principles and Tight-Binding Study

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

First-principles calculations of mechanical and electronic properties of silicene under strain

Strain Induced Spin-Splitting and Half-Metallicity in Antiferromagnetic Bilayer Silicene under Bending

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Strain and chirality effects on the mechanical and electronic properties of silicene and silicane under uniaxial tension

Observation of Van Hove Singularities in Twisted Silicene Multilayers.

Dirac Points And Van Hove Singularities Of Silicene Under Uniaxial Strain

Anomalous strain effect on the thermal conductivity of low-buckled two-dimensional silicene

Tailoring Of The Structural, Energetic And Electronic Properties Of Silicene-Based Nanostructures

Strain-induced semiconductor to metal transition in MA2Z4 bilayers

Tuning the Electronic Structure of Silicene and Germanene by Biaxial Strain and Electric Field

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

Influence of strain and electric field on the properties of silicane

Strain-induced energy band gap opening in two-dimensional bilayered silicon film

Strain-controlled Valley and Spin Separation in Silicene Heterojunctions

Comparative Study on the Nonlinear Properties of Bilayer Graphene and Silicene under Tension

Electronic Phase Diagram of Single-Element Silicon “strain” Superlattices

Phonon-mediated Superconductivity in Silicene

Effect of strain on the electronic and magnetic properties of bilayer T-phase VS2: A first-principles study