Strain-controlled Valley and Spin Separation in Silicene Heterojunctions

Yuan Li,H. B. Zhu,G. Q. Wang,Y. Z. Peng,J. R. Xu,Z. H. Qian,R. Bai,G. H. Zhou,C. Yesilyurt,Z. B. Siu,M. B. A. Jalil
DOI: https://doi.org/10.1103/physrevb.97.085427
2018-01-01
Abstract:We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modulation of valley- and spin-dependent transport by changing the amplitude and the stretch direction of the strain. The phenomenon of the strain-induced valley and spin deflection can be exploited for silicene-based valleytronics devices.
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