Abstract:We carry out both the tight-binding model and the $ab\ initio$ to study the layered silicene, the spin, valley, sublattice degrees of freedom are taken into consider and the effects of electric field, magnetic field, and even the light in finite frequency together with its interesting optical propertice, which are all closely related to the spin-orbit coupling and Rashba coupling and lead to the tunable phase transitions (between the nontrivial topological phase which has nonzero Chern number or nonzero spin Chern number and the trivial phase). An exotic quantum anomalous Hall insulator phase are found which has nonzero spin Chern number and nonzero valley Chern number and as a giant-application-potential spintronic and valleytronics in the two-ternimate devices based on the monolayer silicene for the information transmission. In fact, the gap-out action can be understanded by analyse the Dirac mass as well as the Zeeman splitting or the external-field-induced symmetry-broken, and the changes of gap has a general nonmonotone-variation characteristic under both the effects of electron filed-induced Rashba-coupling $R_{2}(E_{\perp})$ and the electron field-induced band gap, and the band inversion related to the spin-orbit coupling which absorbs both the spin and orbital angular of momentum may happen during this process. The quantized Hall/longitudinal conductivity together with the optical conductivity are also explored, we see that even in the quantum spin Hall phase without any magnetic field, the two-terminate conductivity can be reduced to the value $e^{2}/h$ by controlling the helical edge model, and it can be further reduced to $e^{2}/2h$ by applying the magnetic field which similar to the graphene.

Electric-field Strength and Doping Level Controlled Spin-Valley Transport in a Silicene Np Junction

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Strain-controlled Valley and Spin Separation in Silicene Heterojunctions

Controllable valley and spin transports in ferromagnetic silicene junctions

Spin-valley decoupling in magnetic silicene superlattices

Theoretical valley-polarized subgap transport and intravalley pairing states in a silicene-based antiferromagnet-superconductor junction

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Gated Silicene as a tunable source of nearly 100% spin-polarized electrons

Topological Spin and Valley Pumping in Silicene

Electron Delocalization in Gate-Tunable Gapless Silicene

Spin-Semiconducting Properties in Silicene Nanoribbons

Effect of a Velocity Barrier on the Spin- and Valley-Dependent Transport in Ferromagnetic Silicene

Spin-polarized Transport in Multiterminal Silicene Nanodevices

Silicene spintronics — A concise reviewProject supported by the National Natural Science Foundation of China (Grant Nos. 11274016 and 11474012), the National Basic Research Program of China (Grant Nos. 2013CB932604 and 2012CB619304), and a National Science Foundation (Grant No. 1207141).

Spin and Valley Dependent Line-Type Resonant Peaks in Electrically and Magnetically Modulated Silicene Quantum Structures

Strain control of real-and lattice-spin currents in a silicene junction

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

Spintronics in zigzag silicene nanoribbons

Tunable spin transport and quantum phase transitions in silicene materials and superlattices

Valley-Spin Polarization in the Magneto-Optical Response of Silicene and Other Similar 2D Crystals

Robust Generation Of Half-Metallic Transport And Pure Spin Current With Photogalvanic Effect In Zigzag Silicene Nanoribbons