Abstract:We carry out both the tight-binding model and the $ab\ initio$ to study the layered silicene, the spin, valley, sublattice degrees of freedom are taken into consider and the effects of electric field, magnetic field, and even the light in finite frequency together with its interesting optical propertice, which are all closely related to the spin-orbit coupling and Rashba coupling and lead to the tunable phase transitions (between the nontrivial topological phase which has nonzero Chern number or nonzero spin Chern number and the trivial phase). An exotic quantum anomalous Hall insulator phase are found which has nonzero spin Chern number and nonzero valley Chern number and as a giant-application-potential spintronic and valleytronics in the two-ternimate devices based on the monolayer silicene for the information transmission. In fact, the gap-out action can be understanded by analyse the Dirac mass as well as the Zeeman splitting or the external-field-induced symmetry-broken, and the changes of gap has a general nonmonotone-variation characteristic under both the effects of electron filed-induced Rashba-coupling $R_{2}(E_{\perp})$ and the electron field-induced band gap, and the band inversion related to the spin-orbit coupling which absorbs both the spin and orbital angular of momentum may happen during this process. The quantized Hall/longitudinal conductivity together with the optical conductivity are also explored, we see that even in the quantum spin Hall phase without any magnetic field, the two-terminate conductivity can be reduced to the value $e^{2}/h$ by controlling the helical edge model, and it can be further reduced to $e^{2}/2h$ by applying the magnetic field which similar to the graphene.

Electron Delocalization in Gate-Tunable Gapless Silicene

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

Gated Silicene as a tunable source of nearly 100% spin-polarized electrons

Electronic Structure and Quasiparticle Bandgap of Silicene Structures

Electronic Structure and Quasiparticle Band Gap of Silicene Structures

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

In-gap Localized States Induced by Adsorbates on Silicene

Strain-controlled Valley and Spin Separation in Silicene Heterojunctions

Electric-field Strength and Doping Level Controlled Spin-Valley Transport in a Silicene Np Junction

ON-State Current Paths and OFF-State Leakage in Nanoscale Silicene Field-Effect Transistors

Integer quantum Hall conductivity and longitudinal conductivity in silicene under the electric field and magnetic field

Integer quantum Hall effect and topological phase transitions in silicene

Theoretical valley-polarized subgap transport and intravalley pairing states in a silicene-based antiferromagnet-superconductor junction

Spin-valley decoupling in magnetic silicene superlattices

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Spin-Semiconducting Properties in Silicene Nanoribbons

Switching Modulation of Spin Transport in Ferromagnetic Tetragonal Silicene

Quantum Anomalous Hall Effect with Landau Levels in Nonuniformly Strained Silicene

Quantum Valley Hall States and Topological Transitions in Pt(Ni, Pd)-Decorated Silicene: A First-Principles Study

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: Towards Tunneling Transistors.