Abstract:Topological insulators (TI) have insulating band gaps in the bulk but gapless surface states topologically protected by time-reversal symmetry [1, 2]. Bi 2 Se 3 , a well-known semiconductor and thermoelectric material, is a TI with a bulk band gap of 0.35 eV and a single Dirac cone on the surface [2, 3]. Most current experimental research focus on the surface states of thin TI samples exfoliated from bulk material [4]. A few groups have reported modification of the surface conduction of such exfoliated TI samples by doping, applying a vertical electric field or polarized light. However, high-performance microelectronic devices based on topological insulators such as the analog of metal oxide semiconductor field effect transistors (MOSFETs) have not yet been reported. MOSFETs are the basic building blocks for digital and analog circuits. In this work, we fabricated and measured surrounding-gate Bi 2 Se 3 nanowire (NW) field-effect transistors. The current-voltage (I-V) characteristics were measured at different temperatures, exhibiting excellent performance: well-saturated output I-V curves and large on/off ratio. The surface metallic conduction can be separated from the bulk conduction with gate electric field at different temperatures. We found that the surface conduction increases as temperature decreases, while the bulk conductance decreases with decreasing temperature. This indicates that the carriers at the surface and the carriers inside the bulk Bi 2 Se 3 body have different properties. In addition, the Bi 2 Se 3 FET exhibits I-V characteristics different to conventional MOSFETs in the weak inversion region. The drain current (I DS ) increases significantly beyond 3ф t (ф t is thermal potential). This trend indicates that the Bi 2 Se 3 nanowire FET current does not follow the same diffusion current model as that describes conventional MOSFETs. We believe I DS in the weak/moderate conductive regions is also dominated by drift current. To further study the topological insulator properties, we have performed magneto-transport measurements and observed Aharonov-Bohm (AB) oscillation that arise from the surface conduction channel that surrounds the Bi 2 Se 3 NW in these FETs. The AB oscillations are obtained at low temperatures with a magnetic field oriented along the channel direction. The devices exhibit the anomalous AB effect [5] while maintaining high FET performance. The AB oscillations have a period of h / e and can be significantly tuned by the top surrounding gate. The resistance has a peak at B = 0 and decreases as the magnetic field increases. This phenomenon indicates that the surface states may be bound together by their spin in the circle and activated for conduction by the magnetic field along the axial direction of the circle. In summary, we have fabricated and measured Bi 2 Se 3 nanowire field effect transistors with excellent I-V characteristics. The devices exhibit anomalous AB oscillation, which may lead to new discovery of spin coupling in topological insulators. References: 1. J. E. Moore, Nature 464, 194 (2010) 2. M. Z. Hasan et al., 82, 3045 (2010). 3. X.-L. Qi et al., Rev. of Modern Phys. 83, 1057 (2011). 4. Y.L. Chen et al., Science 325 , 178-181 (2009). 5. Y. Zhang and A. Vishwanath, Phys. Rev. Lett. 105, 206601 (2010).

ON-State Current Paths and OFF-State Leakage in Nanoscale Silicene Field-Effect Transistors

Electron Delocalization in Gate-Tunable Gapless Silicene

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Electric-field Strength and Doping Level Controlled Spin-Valley Transport in a Silicene Np Junction

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Quantized Field-Effect Tunneling Between Topological Edge or Interface States

The Impact of Electron Phonon Scattering, Finite Size and Lateral Electric Field on Transport Properties of Topological Insulators: A First Principles Quantum Transport Study

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: Towards Tunneling Transistors.

Switching Modulation of Spin Transport in Ferromagnetic Tetragonal Silicene

Leakage and Thermal Reliability Optimization of Stacked Nanosheet Field-Effect Transistors with SiC Layers

On-State Current Optimization for SnSe2 Tunneling Field Effect Transistors with Silicene Electrodes

Topological Spin and Valley Pumping in Silicene

Topological Insulator Bi2Se3 Nanowire Field Effect Transistors

Electronic Structure and Quantum Transport Properties of 2D SiP: A First-Principles Study

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Electrical analysis of hysteresis in solution processed silicon nanowire field effect transistors

Electron transport probing the electrically tunable topological phase transition in a Dirac semimetal

Suppression of Leakage Current in Carbon Nanotube Field-Effect Transistors

Spin-Semiconducting Properties in Silicene Nanoribbons