Abstract:Recently, cold source transistor (CSFET) with steep-slope subthreshold swing (SS) < 60 mV/decade has been proposed to overcome Boltzmann tyranny in its ballistic regime. However the scattering, especially by inelastic scattering may lead serious SS degradation through cold carrier thermalization. In this study, the electronic excitation/relaxation dynamic process is investigated theoretically by virtue of the state-of-the-art nonadiabatic molecular dynamics (NAMD) method, i.e., the mixed quantum-classical NAMD. The mixed quantum-classical NAMD considers both carrier decoherence and detailed balance to calculate the cold carrier thermalization and transfer processes in semiconductor Si, and metallic silicide (NiSi2 and CoSi2). The dependence of the thermalization factor, relaxation time, scattering time and scattering rate on energy level are obtained. The thermalization of carrier gradually increases from low energy to high energy. Partially thermalization from the ground state to reach the thermionic current window is realized with sub-100 $fs$ time scale. Fully thermalization to entail energy region depends on the barrier height sensitively, i.e., the scattering rate decreases exponentially as the energy of the out-scattering state increase. The scattering rate of NiSi2 and CoSi2 is 2 orders of magnitude higher than that of Si, arising from their higher density of states than that in Silicon This study can shed light on the material design for low power tunneling FET as well as the emerging CSFET.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to study the thermalization effect of cold carriers in semiconductor silicon (Si) and metal silicides (NiSi₂ and CoSi₂). Specifically, the paper focuses on how to understand the electron excitation/relaxation dynamic processes in these materials through the Non - Adiabatic Molecular Dynamics (NAMD) method. #### Background problems 1. **Challenges of Cold - Source Field - Effect Transistor (CSFET)** - The Cold - Source Field - Effect Transistor (CSFET) is a new type of transistor whose sub - threshold swing (SS) can be less than 60 mV/decade to overcome the Boltzmann limit. - However, scattering (especially inelastic scattering) may lead to serious SS degradation because the thermalization of cold carriers will significantly affect device performance. 2. **Importance of the thermalization process** - Understanding the thermalization process of carriers from low - energy states to high - energy states is crucial for designing low - power tunneling field - effect transistors (TFETs) and emerging CSFETs. - Especially in advanced ultra - scaled transistors, even if the transport length is less than 20 nm, various scatterings will lead to performance degradation. #### Research objectives 1. **Explore the thermalization mechanism** - Use the latest NAMD method to study inelastic scatterings (such as electron - phonon scatterings) in semiconductor silicon and two metal silicides (NiSi₂ and CoSi₂) to reveal the thermalization process of cold carriers. 2. **Quantify thermalization parameters** - Obtain the relationships of thermalization factors, relaxation times, scattering times and scattering rates with energy levels, so as to predict the thermalization times of cold carriers in semiconductors and metal silicides and provide insights into the determinants of thermalization. 3. **Guide material design** - Provide a theoretical basis for the design of low - power tunneling field - effect transistors (TFETs) and cold - source field - effect transistors (CSFETs) by studying the thermalization characteristics of different materials. ### Summary The main purpose of this paper is to deeply study the thermalization process of cold carriers in semiconductor silicon and metal silicides through the non - adiabatic molecular dynamics method, in order to provide theoretical support for the design of new - type transistors with high performance and low power consumption. This not only helps to understand the basic physical mechanisms of carrier transport, but also provides an important reference for future material selection and device optimization.

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