Abstract:Transistor compact model (TCM) is the key bridge between process technology and circuit design. Typically, TCM is desired to capture the nonlinear device electronic characteristics and their high-order derivatives. However, for the novel devices in advanced and future technologies, establishing TCM based on analytical equations and extracting model parameters becomes tedious. The model fitting capability for device outputs' high-order derivatives is also limited. These drawbacks hinder fast and accurate device to circuit evaluation cycles. We develop a TCM based on multigradient neural network (MNN) using computational graph in the PyTorch framework. This MNN model is able to simultaneously capture the transistor dc/ac characteristics, such as I-V/Q-V, their derivatives (G-V/C-V), and higher order derivatives accurately. Moreover, the model architecture can be widely adapted to various device types. Based on this model scheme, software is developed to enable the automated model generation for standard SPICE simulation. Finally, the model and software are validated for novel gate-all-around (GAA) Si cold source field-effect transistors (CSFET), and 19-stage ring oscillator and two-stage operational amplifier circuit simulations have also been demonstrated. This work reduces the cycle of novel device compact model creation and circuit benchmark simulation from months or weeks to hours. In addition, it enables more precise circuit simulation for analog and RF circuits, and it provides a rapid solution for early stage design technology cooptimization (DTCO).

A Multi-physics TCAD Framework for Fast and Accurate Simulation of SteepSlope Si-based Cold Source FET

Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model

A Multiscale Simulation Framework for Steep-Slope Si Nanowire Cold Source FET

Multi-Physics Evaluation of Silicon Steep-Slope Cold Source FET

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Machine Learning-Based Compact Modeling of Silicon Cold Source Field-Effect Transistors

First Principles Simulation of Energy Efficient Switching by Source Density of States Engineering

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Simulation of a Steep-Slope p- and n-Type HfS2/MoTe2 Field-Effect Transistor with the Hybrid Transport Mechanism

Cold Source Engineering towards Sub-60mV/dec p-Type Field-effect-transistors (pFETs): Materials, Structures, and Doping Optimizations

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS 2

A New Framework to MOS Device for Cryogenic Application: Linking Materials with Modeling

Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs

Study of 20nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction

A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors

Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature