Abstract:The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy relation (D(E)), engineering the source: channel interface for gate-tunable channel-barrier is crucial to a CS-FET. However, conventional metal: semiconductor (MS)-interfaces generally suffer from strong Fermi-level-pinning due to the inevitable chemical disorder and defect-induced gap states, precluding the gate-tunability of the barriers. By comprehensive materials and device modeling at the atomic-scale, we report that the two-dimensional (2D)-van der Waals (vdW)-MS-interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS-FETs. As test cases, InSe-based n-type FETs are studied. It is found that graphene can be spontaneously p-type doped along with slightly opened bandgap around the Dirac-point by interfacing with InSe, resulting in super-exponentially decaying hot carrier density with increasing n-type channel-barrier. Moreover, the D(E) relations suggest that 2D-transition-metal-dichalcogenides and 2D-transition-metal-carbides are rich libraries of CS materials. Both graphene and H-TaTe2 CSs lead to subthreshold swing below 60 mV/decade. This work broadens the application potentials of 2D-vdW-MS-heterostructures and serves as a springboard for more studies on low-power electronics based on 2D materials.

First Principles Simulation of Energy Efficient Switching by Source Density of States Engineering

Dirac Electrons at the Source: Breaking the 60-Mv/decade Switching Limit

Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature

Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model

Dirac-source Field-Effect Transistors As Energy-Efficient, High-Performance Electronic Switches

Cold Source Engineering towards Sub-60mV/dec p-Type Field-effect-transistors (pFETs): Materials, Structures, and Doping Optimizations

A Multiscale Simulation Framework for Steep-Slope Si Nanowire Cold Source FET

Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors

Multi-Physics Evaluation of Silicon Steep-Slope Cold Source FET

A Multi-physics TCAD Framework for Fast and Accurate Simulation of SteepSlope Si-based Cold Source FET

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Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

Steep-Slope Transistors Based on Chiral Graphene Nanoribbons With Intrinsic Cold Source

Switching at Less Than 60 Mv/decade with a “cold” Metal As the Injection Source

Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS 2

A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors

Sub-60 mV/decade switching with a cold metal as the injection source

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Three-Dimensional Cold Metals in Realizing Steep-Slope Transistors Based on Monolayer MoS2