Abstract:This review manuscript mainly focus on giving readers a concise concept of green transistors with steep slopes based on 2D materials, including but not limited to 2D NCFET, 2D DSFET and 2D TFET structures. These kinds of 2D materials based green transistors concurrently combine the merits of lower power consumption of green steep slope transistors and superelectrostatic gate controllability and short channel effect immunity properties of 2D materials, holding substantial potentials for applications in low power consumption electronics. With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down proportionally caused by thermionic limit subthreshold swing (SS) (60 mV dec−1) pose substantial challenges for today's semiconductor industry. To further sustain the Moore's law life, incorporation of new device concepts or new materials are imperative. 2D materials are predicted to be able to combat SCEs by virtue of high carrier mobility maintainability regardless of thickness thinning down, dangling bonds free surface and atomic thickness, which contributes to super gate electrostatic controllability. To overcome increasing power dissipation problem, new device structures including negative capacitance FET (NCFET), tunnel FET (TFET), dirac source FET (DSFET) and the like, which show superiority in decreasing VDD by lowering SS below thermionic limit of 60 mV dec−1 have been brought out. The combination of 2D materials and ultralow steep slope device structures holds great promise for low power‐dissipation electronics, which encompass both suppressed SCEs and reduced VDD simultaneously, leading to improved device performance and lowered power dissipation.

Dirac-source Field-Effect Transistors As Energy-Efficient, High-Performance Electronic Switches

Dirac Electrons at the Source: Breaking the 60-Mv/decade Switching Limit

Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature

First Principles Simulation of Energy Efficient Switching by Source Density of States Engineering

Tunnel field-effect transistors as energy-efficient electronic switches

N‐type Dirac‐Source Field‐Effect Transistors Based on a Graphene/Carbon Nanotube Heterojunction

Cold Source Engineering towards Sub-60mV/dec p-Type Field-effect-transistors (pFETs): Materials, Structures, and Doping Optimizations

Dirac-source Diode with Sub-Unity Ideality Factor

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current.

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Atomic Threshold-Switching Enabled MoS2 Transistors Towards Ultralow-Power Electronics

Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

Energy-efficient transistors: suppressing the subthreshold swing below the physical limit

Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures

A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal-semiconductor phase transition

All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope

Steep Slope Field Effect Transistors Based on 2D Materials

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS 2

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

High performance tunnel field-effect transistor by gate and source engineering.