Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

S. Aria Hosseini,Alathea Davies,Ian Dickey,Neophytos Neophytou,P. Alex Greaney,Laura de Sousa Oliveira
DOI: https://doi.org/10.48550/arXiv.2110.11566
2022-05-15
Abstract:The ability to minimize the thermal conductivity of dielectrics with minimal structural intervention that could affect electrical properties is an important capability for engineering thermoelectric efficiency in low-cost materials such as Si. We recently reported the discovery of special arrangements for nanoscale pores in Si that produce a particularly large reduction in thermal conductivity accompanied by strongly anticorrelated heat current fluctuations, a phenomenon that is missed by the diffuse adiabatic boundary conditions conventionally used in numerical Boltzmann transport models. This manuscript presents the results of molecular dynamics simulations and a Monte Carlo ray tracing model that teases apart this phenomenon to reveal that special pore layouts elastically backscatter long-wavelength heat-carrying phonons. This means that heat carriage by a phonon before scattering is undone by the scattered phonon, resulting in an effective mean-free-path that is significantly shorter than the geometric line-of-sight to the pores. This effect is particularly noticeable for the long-wavelength, long mean-free-path phonons whose transport is impeded drastically more than is expected purely from the usual considerations of scattering defined by the distance between defects. This super-suppression of the mean-free-path below the characteristic length scale of the nanostructuring offers a route for minimizing thermal conductivity with minimal structural impact, while the stronger impact on long wavelengths offers possibilities for the design of band-pass phonon filtering. Moreover, the ray tracing model developed in this paper shows that different forms of correlated scattering imprint a unique signature in the heat current autocorrelation function that could be used as a diagnostic in other nanostructured systems.
Materials Science,Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to achieve "super - suppression" of the long - wave phonon mean - free - path in nano - engineered silicon materials through a specific nanopore layout, thereby minimizing the thermal conductivity without significantly affecting the electrical properties. This research is of great significance for improving the thermoelectric efficiency of low - cost materials such as silicon. Specifically, the paper explores how to elastically back - scatter long - wave phonons through a specially arranged nanopore structure, causing the heat transfer of these phonons before and after scattering to cancel each other out, and thus effectively shortening the actual mean - free - path of phonons, far below the geometric line - of - sight distance to the pores. This phenomenon particularly affects phonons with long wavelengths and long mean - free - paths, and the obstruction to their transmission is far greater than that predicted by traditional scattering theories. In addition, the paper also proposes leaving a unique signature in the heat - flow autocorrelation function through different forms of correlated scattering, which can be used as a diagnostic tool in other nanostructured systems. The core problem of the paper is to reveal and explain the phenomenon of an abnormally low thermal conductivity in nanoporous silicon materials due to anti - correlated fluctuations in heat flow, especially how this reduction is achieved through the "super - suppression" mechanism of long - wave phonons. Through molecular dynamics simulations and Monte Carlo ray - tracing models, the research team analyzed this special phenomenon in detail and provided theoretical support, demonstrating that closely - spaced nanopores can significantly reduce the thermal conductivity by selectively scattering long - wave phonons while keeping the electrical properties of the material unaffected.