Abstract:Electrons in operating microelectronic semiconductor devices are accelerated by locally varying a strong electric field to acquire effective electron temperatures nonuniformly distributing in nanoscales and largely exceeding the temperature of the host crystal lattice. The thermal dynamics of electrons and the lattice are hence nontrivial and its understanding at nanoscales is decisively important for gaining a higher device performance. Here, we propose and demonstrate that in layered conductors the nonequilibrium nature between the electrons and the lattice can be explicitly pursued by simulating the conducting layer by separating it into two physical sheets representing, respectively, the electron and the lattice subsystems. We take, as an example of simulating GaAs devices, a 35 nm thick, 1 mu m wide U-shaped conducting channel with 15 nm radius of curvature at the inner corner of the U-shaped bend, and find a remarkable hot spot to develop due to hot-electron generation at the inner corner. The hot spot in terms of the electron temperature achieves a significantly higher temperature and is of far sharper spatial distribution when compared to the hot spot in terms of the lattice temperature. A similar simulation calculation made on a metal (NiCr) narrow lead of similar geometry shows that a hot spot shows up as well at the inner corner, but its strength and the spatial profiles are largely different from those in semiconductor devices; viz., the amplitude and the profile of the electron system are similar to those of the lattice system, indicating quasi-equilibrium between the two subsystems. The remarkable difference between the semiconductor and the metal is interpreted to be due to the large difference in the electron specific heat, rather than the difference in the electron phonon interaction. This work will provide useful hints to a deeper understanding of the nonequilibrium properties of electrical conductors, through a simple and convenient method for modeling nonequilibrium layered conductors. Copyright (C) EPLA, 2019.

On the Cooling of Electrons in a Silicon Inversion Layer

Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Conductivity freeze-out in isotopically pure -28 at millikelvin temperatures

Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

Superconducting platinum silicide for electron cooling in silicon

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

Conductivity Freeze-Out in Isotopically Pure Si-28 at milli-Kelvin Temperatures

Low Temperature Investigation of Electrical Conduction in Polysilicon: Simulation and Experiment

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

The energy scale behind the metallic behaviors in low-density Si-MOSFETs

Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K

Simulation of temperature profile for the electron and the lattice systems in laterally structured layered conductors

Crossover From Quantum Mechanical Tunneling to the Superlinear Power Law in Silicon Microcrystal, Doped by Boron and Nickel

Hot Electron Effects in the 2D Superconductor-Insulator Transition

Low temperature conduction behavior in highly crystallized undoped microcrystalline silicon thin films

Drag of electron-hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature

High Temperature Quantum Kinetic Effect in Silicon Nanosandwiches

Direct Observation of Hot-Electron-Enhanced Peltier Effects in Silicon Nanodevices