Abstract:The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in silicon. Unexpectedly, the extracted heat transfer rate to phonons at low temperatures depends cubically on electron temperature, suggesting that piezoelectric coupling (absent in bulk silicon) dominates over deformation potential. According to our findings, at 100 mK, electrons farther than 0.1 mm from the contacts are mostly cooled by phonons. Using long devices and low excitation voltage we measure electron resistivity down to 100 mK and find that some of the "metallic" curves, reported earlier, turn insulating below about 300 mK. This finding renders the definition of the claimed 2D metal-insulator transition questionable. Previous low temperature measurements in silicon devices are analyzed and thumb rules for evaluating their electron temperatures are provided.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about the cooling mechanism of two - dimensional electron systems at low temperatures and its influence on resistivity behavior, especially in silicon metal - oxide - semiconductor field - effect transistors (Si MOSFET). Specifically, the research aims to explore the following aspects: 1. **Electron Cooling Mechanism**: It has been found that the cooling efficiency of two - dimensional electrons in the silicon inversion layer is more effective than the expected electron - phonon coupling in bulk materials. Experimental results show that at low temperatures, the heat transfer rate between the electron temperature and the lattice temperature depends on the cube of the electron temperature, suggesting that there may be other coupling mechanisms (such as piezoelectric coupling), which do not exist in bulk silicon. 2. **Transition in Resistivity Behavior**: By measuring the resistivity at different temperatures and excitation voltages, the researchers found that some curves previously considered "metallic" exhibit insulating behavior when the temperature drops below about 300 mK. This finding challenges the definition of the two - dimensional metal - insulator phase transition. 3. **Problems in Low - Temperature Measurements**: The paper also analyzes the problems in early low - temperature measurements, especially the phenomenon that the electron temperature deviates from the lattice temperature due to high contact resistance and weak electron - phonon coupling. These problems are particularly significant at low temperatures and affect the understanding of the properties of two - dimensional electron systems. In summary, the core problem of this paper is to explore the cooling mechanisms of two - dimensional electron systems and verify how these mechanisms affect resistivity behavior, especially under low - temperature conditions. This helps to gain a deeper understanding of the metal - insulator phase - transition phenomenon in two - dimensional electron systems and the physical mechanisms behind it.

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