M J Prest,J S Richardson-Bullock,Q T Zhao,J T Muhonen,D Gunnarsson,M Prunnila,V A Shah,T E Whall,E H C Parker,D R Leadley
Abstract:We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures and enables electron cooling to be demonstrated from 100 mK to 50 mK.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **How to effectively cool electrons in silicon at low temperatures**.
Specifically, the authors explored the application of platinum silicide (PtSi) as a superconducting contact material in tunnel - junction coolers. The goal of the research was to use superconductors to selectively remove high - energy electrons, thereby achieving cooling of electrons in semiconductors. As a superconducting material, platinum silicide exhibits a relatively low superconducting critical temperature and a small superconducting energy gap in the thin - layer state, which helps to improve the cooling performance at extremely low temperatures.
### Main problems and solutions
1. **Problem**: At extremely low temperatures (< 1 K), the thermal coupling between the lattice and the electron gas becomes very weak, causing the temperature of the electron gas to be lower than the lattice temperature.
- **Solution**: By introducing a superconducting - semiconductor - superconducting (S - Sm - S) - structured tunnel junction, high - energy electrons are selectively removed, thereby achieving electron cooling.
2. **Problem**: Traditional superconducting materials may not be effectively cooled at extremely low temperatures due to large superconducting energy gaps.
- **Solution**: Use platinum silicide (PtSi) as a superconducting material and make it into a 10 - nm - thick film to reduce the superconducting critical temperature and energy gap, thereby enhancing the cooling performance at low temperatures.
3. **Problem**: It is necessary to verify the cooling effect of platinum silicide in actual devices.
- **Solution**: Through the comparison of experimental measurements and theoretical models, it was verified that PtSi achieved effective electron cooling in the range from 100 mK to 50 mK.
### Key formulas
- **Fermi distribution function**:
\[
f(E, T)=\frac{1}{1+\exp\left(\frac{E}{k_{B}T}\right)}
\]
where \(k_{B}\) is the Boltzmann constant, \(E\) is energy, and \(T\) is temperature.
- **Dynes density - of - states function**:
\[
g(E, \Delta, \Gamma)=\text{Re}\left[\frac{\sqrt{(E - i\Gamma)^{2}-\Delta^{2}}}{E - i\Gamma}\right]
\]
where \(\Delta\) is the superconducting energy gap and \(\Gamma\) is the Dynes leakage parameter.
- **Cooling power expression**:
\[
P(T_{e}, V)=\int_{-\infty}^{\infty}\left[f(E, T_{e})-f(E - eV, T_{b})\right]g(E, \Delta, \Gamma)dE
\]
where \(T_{e}\) is the electron temperature, \(T_{b}\) is the ambient temperature, and \(V\) is the bias voltage.
### Conclusion
By using a 10 - nm - thick platinum silicide film, the researchers successfully reduced the superconducting critical temperature from 1 K to 0.79 K and demonstrated effective electron cooling from 100 mK to 50 mK. The experimental results are consistent with the cooling model, proving the potential of platinum silicide in low - temperature electron cooling. In addition, the study also pointed out that platinum silicide also has potential application value in cooling holes because it has a lower tunneling barrier for holes.