Abstract:Electrical and thermal transport in silicon germanium superlattice nanostructures has received extensive attention from scientists for understanding carrier properties at the nanoscale, and the figure-of-merit (ZT) reported in such structures has inspired engineers to develop cost-effective waste heat recovery systems. In this paper, the thermoelectric transport properties of the silicon-based superlattice- and anti-superlattice-nanocrystalline heterostructures are systematically studied by first-principles and molecular dynamics simulations combined with the Boltzmann transport theory. The thermal conductivity, which is thought to be the essential bottleneck for bulk crystalline Si to gain a high ZT value, of such structures is found to be reduced by two orders of magnitude and reaches a level far below the amorphous limit of Si. This is achieved due to the extremely strong phonon-boundary scattering at both grain boundaries and Si-Ge interfaces, which will lead to the phonon mean free path being much smaller than the grain size (Casmir limit): for instance, the dominant phonons are in range of 0.5 to 3 nm for the heterostructures with a grain size of around 8 nm. Meanwhile, the power factor can be preserved at the level comparable to bulk crystalline because of the quantum confinement effect, which resulted from the conduction band minima converge, reduction of band gap, and the short mean free path of carriers. As a result, the ZT of such superlattice based nanomembranes can reach around 0.3 at room temperature, which is two orders of magnitude higher than the bulk crystalline case. The corresponding bulk superlattice-nanocrystalline heterostructures possess a ZT value of 0.5 at room temperature, which is superior to all other bulk silicon-based thermoelectrics. Our results here show that nanostructuring the superlattice structure can further decrease the thermal conductivity while keeping the electrical transport properties at the bulk comparable level, and provides a new strategy for enhancing the thermoelectric performance of the silicon-based nanostructures.

Reducing the Thermal Conductivity of Silicon by Nanostructure Patterning

Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity

Silicon nanowires as efficient thermoelectric materials

Thermoelectric characterization of crystalline nano-patterned silicon membranes

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores

First-principles and Molecular Dynamics Study of Thermoelectric Transport Properties of N-type Silicon-Based Superlattice-Nanocrystalline Heterostructures

The Role of Electron-Phonon Interaction in Heavily Doped Fine-Grained Bulk Silicons As Thermoelectric Materials

Thermal conductivity reduction in rough silicon nanomembranes

Ultralow thermal conductivity of single crystalline porous silicon nanowires

Remarkable reduction of thermal conductivity in silicon nanotubes.

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

Thermoelectric Performance of Silicon Nanowires

External electric field driving the ultra-low thermal conductivity of silicene.

Ultralow thermal conductivity of silicon nanowire arrays by molecular dynamics simulation

Enhanced Thermoelectric Properties in a New Silicon Crystal Si24 with Intrinsic Nanoscale Porous Structure

Broadly manipulating the interfacial thermal energy transport across the Si/4H-SiC interfaces via nanopatterns

Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire

Thermoelectric performance in a Si allotrope with ultralow thermal conductivity: a first-principles study combining phonon-limited electronic transport calculations

Mitigating the Effect of Nanoscale Porosity on Thermoelectric Power Factor of Si

Thermoelectrical properties of silicon substrates with nanopores synthesized by metal-assisted chemical etching