Abstract:Hydrogenated amorphous Si thin films were prepared by plasma-enhanced chemical vapor deposition. As-deposited samples were annealed at different temperatures to obtain nano-crystalline Si. During the transition process from amorphous to nano-crystalline structure, Raman scattering spectroscopy was used to characterize the changes of microstructures. The temperature-dependent conductivity was measured in order to understand the electric transport processes in the films. It was found that the crystallization occurs at around 700 °C. The crystal volume fraction （ X c ） increases with the increase of annealing temperature, and in the case of the Si film annealed at 1000 ℃, the X c is beyond 90%. The carrier transport characteristics in the films annealed at the different temperatures are different from the as-deposited film. For the sample annealed at 700 ℃, the carrier transport is strongly influenced by the defect states resulting from the effusion of hydrogen, and it is controlled by the hopping conduction of the localized states in the difference measurement temperature regions causing the dual activation energies. For the highly crystallized Si film annealed at 1000 °C, the transport process is strongly influenced by the transport of the extended states in the crystalline silicon, while in the high temperature region, the quantum tunneling process plays an important role in the carrier transport property.

Low temperature conduction behavior in highly crystallized undoped microcrystalline silicon thin films

Fractional composition of large crystallite grains: a unique microstructural parameter to explain conduction behavior in single phase undoped microcrystalline silicon

Determination of localized conduction band-tail states distribution in single phase undoped microcrystalline silicon

Temperature Dependence of the Conductivity of an Electronic Crystal

Effective density of states profiles of heterogeneous microcrystalline silicon

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Properties of Electric Transport in Crystallized Silicon Films under Different Annealing Temperatures

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

Low-Temperature Electron Transport in [110] and [100] Silicon Nanowires: A DFT - Monte Carlo study

Low-Temperature Study of Array of Dopant Atoms on Transport Behaviors in Silicon Junctionless Nanowire Transistor

AC electrical properties of nanocrystalline silicon thin films

Thermal conduction in ultrathin pure and doped single-crystal silicon layers at high temperatures

On the Cooling of Electrons in a Silicon Inversion Layer

Crossover From Quantum Mechanical Tunneling to the Superlinear Power Law in Silicon Microcrystal, Doped by Boron and Nickel

Enhanced heat transport in amorphous silicon via microstructure modulation

Low Temperature Investigation of Electrical Conduction in Polysilicon: Simulation and Experiment

Effective density of states map of undoped microcrystalline Si films: a combined experimental and numerical simulation approach

Hopping Conduction in Partially Compensated Doped Silicon.

A Conduction Model for Polysilicon Thin Films over a Wide Doping Level Range

Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K