Effective density of states profiles of heterogeneous microcrystalline silicon

Sanjay K. Ram,Satyendra Kumar

DOI: https://doi.org/10.48550/arXiv.cond-mat/0702380

2007-02-16

Abstract:The steady state photoconductivity as a function of temperature and light intensity was measured on plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films possessing different thicknesses and microstructures. Different phototransport behaviors were observed experimentally in films having dissimilar microstructural attributes. This has been explained by numerical modeling to link these behaviors to different features of the proposed density of states maps of the material.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the influence of different microstructures in hydrogenated microcrystalline silicon (µc - Si:H) materials on their photoelectric transport properties, especially how to explain these properties through the effective density of states (DOS) distribution. Specifically, the main research problems include:

1. **Differences in light - transport behaviors of µc - Si:H materials with different microstructures**:
- The paper experimentally measured the steady - state photoconductivity (SSPC) of highly crystalline undoped hydrogenated microcrystalline silicon films with different thicknesses and microstructures under temperature and light intensity. It was experimentally observed that films with different microstructure characteristics exhibited different light - transport behaviors.

2. **Relationship between density - of - states distribution and light - transport properties**:
- To understand these different light - transport behaviors, the researchers used numerical modeling to relate these behaviors to different features of the proposed material density - of - states diagrams. It was found that different microstructures would lead to different effective density - of - states distributions, thereby affecting light - transport properties.

3. **Understanding of recombination mechanisms**:
- The researchers also explored the recombination mechanisms in different types of µc - Si:H materials. Through numerical simulation, they analyzed the recombination rates at different temperatures and determined the dominant recombination processes. For example, in type - A materials, recombination mainly occurs in the shallow valence - band - tail (VBT) states and is independent of temperature; while in type - C materials, as the temperature rises, deeper VBT states begin to participate in the recombination process.

4. **Basic research for improving device technology**:
- Understanding the physical properties of these materials is crucial for further improving device technology based on µc - Si:H. By constructing effective density - of - states distributions applicable to different types of µc - Si:H materials, theoretical support can be provided for future device design.

In summary, this paper aims to reveal the light - transport behaviors in µc - Si:H materials with different microstructures and the underlying physical mechanisms through experiments and numerical modeling, especially the roles of density - of - states distribution and recombination mechanisms. This not only enhances the understanding of the physical properties of such materials but also provides an important theoretical basis for future technological applications.