Abstract:We report on the phototransport properties of microstructurally well characterized plasma deposited highly crystallized microcrystalline silicon films. The steady state photoconductivity was measured on a wide microstructural variety of single-phase undoped microcrystalline silicon films as a function of temperature and light intensity. The band-tail parameter (kTc) was calculated from the photoconductivity light intensity exponent values at different temperatures for a range of quasi-Fermi energies. The localized tail states distribution in the vicinity of conduction band edge of microcrystalline silicon was estimated using the values of kTc. Our study shows that microcrystalline silicon films possessing dissimilar microstructural attributes exhibit different phototransport behaviors, which are linked to different features of the density of states maps of the material.

What problem does this paper attempt to address?

This paper aims to study the local conduction - band - tail - state distribution in single - phase undoped microcrystalline silicon (μc - Si:H) films. Specifically, the authors explore the light - transmission properties of μc - Si:H films with different microstructure characteristics by measuring the steady - state photoconductivity (σph) under different temperatures and light - intensity levels. By analyzing the exponent (γ value) of the power - law dependence of photoconductivity on light - intensity level and the position of the quasi - Fermi level, the authors estimate the local tail - state distribution near the conduction - band edge. This study reveals that μc - Si:H films with different microstructure properties exhibit different light - transmission behaviors, and these differences are related to the different characteristics of the density - of - states diagrams of the materials. The key formulas used in the paper include: 1. The non - integer power - law dependence of photoconductivity on the carrier - generation rate \( G_L \): \[ \sigma_{ph} \propto G_L^{\gamma} \tag{1} \] 2. The expression for the trapped - electron density \( n_t \): \[ n_t(E) = \int_{-\infty}^{E} g(E') f(E') dE' \tag{2} \] 3. When the discrete states are exponentially distributed within the bandgap, the power \( \gamma \) of the photocurrent - vs - light - intensity curve: \[ \gamma = \frac{kT_c}{kT + kT_c} \tag{3} \] 4. The determination of the quasi - Fermi level: \[ \phi(T) = \left[ \frac{E_f(T) - E_c}{kT} \right] = \ln \left( \frac{\sigma_{ph}(T)}{\sigma_d(T)} \right) \tag{4} \] 5. The simplified quasi - Fermi - level expression: \[ \phi_0 = \left[ \frac{E_f(T) - E_c}{kT_c} \right] = \ln \left( \frac{\sigma_{ph}(T)}{\sigma_0} \right) \tag{5} \] Using these formulas and experimental data, the authors are able to estimate the conduction - band - tail - state parameter \( kT_c \) and further derive the density - of - states distribution near the conduction - band edge at different temperatures. The research results show that μc - Si:H films with different microstructures have different light - transmission behaviors, which are closely related to their density - of - states - distribution characteristics.

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