Localized States Within the Gap of Ce3Au3Sb4

Han-Oh Lee,V. A. Sidorov,P. Schlottmann,Cathie Condron,Peter Klavins,Susan M. Kauzlarich,J. D. Thompson,Z. Fisk
DOI: https://doi.org/10.1016/j.physb.2007.10.309
IF: 2.988
2007-01-01
Physica B Condensed Matter
Abstract:The temperature dependence of the specific heat and of the resistivity under pressure has been measured for single crystals of the semiconductor Ce3Au3Sb4. The transport data follow an exponential activation and variable range hopping at low T, consistent with weak disorder and localization, while C/T has a -lnT dependence with large entropy. Thus the properties of Ce3Au3Sb4 are very different from those of ordinary Kondo insulators.
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