Effective density of states map of undoped microcrystalline Si films: a combined experimental and numerical simulation approach

Sanjay K. Ram,Satyendra Kumar

DOI: https://doi.org/10.48550/arXiv.cond-mat/0702381

2007-07-13

Abstract:The phototransport properties of plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films were studied by measuring the steady state photoconductivity (SSPC) as a function of temperature and light intensity. The films possessing different thicknesses and microstructures had been well characterized by various microstructural probes. Microcrystalline Si films possessing dissimilar microstructural attributes were found to exhibit different phototransport behaviors. We have employed numerical modeling of SSPC to corroborate and further elucidate the experimental results. Our study indicates that the different phototransport behaviors are linked to different features of the proposed density of states maps of the material which are different for microcrystalline Si films having different types of microstructure.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to understand the light - transmission characteristics in undoped hydrogenated microcrystalline silicon (µc - Si:H) films with different microstructures, and to propose the effective density - of - states (DOS) diagrams of these materials through a combination of experimental and numerical simulation methods.

Specifically, the research aims to:

1. **Explain different light - transmission behaviors**: By measuring the change of steady - state photoconductivity (SSPC) with temperature and light intensity, the research found that µc - Si:H films with different thicknesses and microstructures exhibit different light - transmission behaviors. These differences are related to the different characteristics of the proposed density - of - states diagrams in the materials, and these characteristics vary with different microstructures.

2. **Construct effective density - of - states diagrams**: Through detailed characterization of µc - Si:H films with different microstructures and combined with numerical simulation, the researchers attempt to construct effective density - of - states diagrams that can explain the light - transmission characteristics of these films. This helps to better understand the carrier recombination mechanisms and defect - state distributions in the materials.

3. **Reveal the influence of microstructure on light - transmission**: The research emphasizes the important influence of microstructure on light - transmission properties, especially how the existence of different types of grain sizes and disordered phases affects the optoelectronic properties of the materials. By analyzing different types of µc - Si:H films, the researchers hope to provide theoretical support for future device applications.

### Formula Summary

During the research process, some key formulas are involved to describe photoconductivity and related physical phenomena:

- Steady - state photoconductivity expression:
\[
\sigma_{ph} = e(\mu_n n-\mu_p p)
\]
where \(\mu_n\) and \(\mu_p\) are the mobilities of free electrons and holes respectively, \(n\) and \(p\) are the steady - state concentrations under photo - excitation, and \(n_0\) and \(p_0\) are the concentrations in the dark state.

- Relationship between photoconductivity and generation rate:
\[
\sigma_{ph}\propto G_L^{\gamma}
\]
where \(G_L\) is the carrier generation rate, and \(\gamma\) is the light - intensity index, which provides information about the recombination mechanism in semiconductor materials.

- Expression of generation rate \(G_L\):
\[
G_L=\frac{\phi}{d}[1 - R][1 - e^{-\alpha d}]
\]
where \(\phi\) is the photon flux, \(R\) is the reflection coefficient, \(\alpha\) is the absorption coefficient, and \(d\) is the film thickness.

- Determination of quasi - Fermi level:
\[
E_f(T)=E_c - kT\ln\left(\frac{\sigma_{ph}}{\sigma_d}\right)
\]

By combining these formulas and experimental data, the researchers can gain a deeper understanding of the light - transmission characteristics of different types of µc - Si:H films and provide a theoretical basis for their potential applications.