Abstract:Field-effect mobility mu(FE) and its activation energy in disordered inorganic and organic semiconductor thin-film transistors is strongly dependent on bias conditions. This implies a nonlinear dependence of conductivity on carrier concentration, which stems from the high density of trapped carriers while only a few contribute to conduction. When mu(FE) is extracted from measurement data, the nonlinear conductivity-concentration dependence is averaged over the semiconducting film. Consequently, mu(FE) becomes mingled with device attributes such as gate capacitance in addition to terminal bias, which undermines the physical interpretation of mu(FE) and subsequent comparison of measured values for different devices and different semiconductors. This paper presents an effective mobility mu(eff) description at a reference carrier concentration, which separates the physical conductivity-concentration dependence from the device and bias attributes, enabling comparison of carrier transport in disordered semiconductors. In particular, by using the generalized concept of mobility edge and exponential band tails we show that mu(eff) can be applied to a wide range of inorganic and organic semiconductors. Indeed, three parameters, viz., mu(eff), exponential band tail slope T(t), and bias-independent activation energy E(a0) of mu(eff), can describe carrier transport in the transistor together with its bias and temperature dependence.

Effective density of states map of undoped microcrystalline Si films: a combined experimental and numerical simulation approach

Effective density of states profiles of heterogeneous microcrystalline silicon

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Determination of localized conduction band-tail states distribution in single phase undoped microcrystalline silicon

Fractional composition of large crystallite grains: a unique microstructural parameter to explain conduction behavior in single phase undoped microcrystalline silicon

Low temperature conduction behavior in highly crystallized undoped microcrystalline silicon thin films

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

The Microstructure and Optical Properties of P-Type Microcrystalline Silicon Thin Films Characterized by Ex-Situ Spectroscopic Ellipsometry

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Elucidation of microstructure of single-phase microcrystalline silicon based on crystallite size distributions

Characterizations on the Doping of Single-Crystal Silicon Carbide

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Generalized Transport-Band Field-Effect Mobility in Disordered Organic and Inorganic Semiconductors

Transport Properties of Μc-Si:H Films Prepared by Very High Hydrogen-Diluted Silane Plasma

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Structural, electronic, and optical-absorption properties of 2D Si thin films

Transport properties of µc-Si:H films prepared by very high hydrogen-diluted silane plasma

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Electronic transport properties in a-Si : H, mu c-Si : H and mu c-SiGe : H films studied by traveling wave method

Properties of Electric Transport in Crystallized Silicon Films under Different Annealing Temperatures

High Electron Mobility in Well Ordered and Lattice-Strained Hydrogenated Nanocrystalline Silicon