Abstract:Nickel (Ni) induced crystallization of amorphous silicon (a-Si) has been studied by selective deposition of Ni on a-Si thin films. The a-Si under and near the Ni-covered regions was found to be crystallized after heat treatment at 500 °C from 1 to 90 h. Micro-Auger electron spectroscopy revealed that a large amount of Ni stayed in the region under the original Ni coverage, but no Ni was detected either in the crystallized region next to the Ni coverage or in the amorphous region beyond the front of the laterally crystallized Si. X-ray photoelectron spectroscopy revealed a nonuniform Ni distribution through the depth of the crystallized film under the original Ni coverage. In particular, a Ni concentration peak was found to exist at the interface of the crystallized Si and the buried oxide. It was found that a layer of 5-nm-thick Ni could effectively induce lateral crystallization of over 100 μm of a-Si, but the lateral crystallization rate was found to decrease upon extended heat treatment. Transmission electron microscopy analysis showed that the crystallized film under the Ni coverage was composed of randomly oriented fine grains, while that outside the Ni coverage was mainly composed of large (110)-oriented grains. A unified mechanism is proposed to explain the Ni induced crystallization of a-Si and possible reasons for the reduction in the lateral crystallization rate are discussed.

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Study on crystallization of hydrogenated nanocrystalline silicon carbon films

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Study on Solid Phase Crystallization of Silicon Films Deposited on Different Substrates

Preparation of noncrystalline silicon carbon films by using heavily hydrogen diluted silane and ethene

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Structural Nature of Nanocrystalline Silicon

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method