Abstract:The electrodeposition at low temperature for the direct growth of crystalline thin films without any templating agent in ionic liquid (IL) is a relatively new electrochemical synthetic strategy. This work studied the role of the deposition temperature, deposition time, and different working electrodes in the electrodeposition of crystalline Si thin films from the byproduct silicon tetrachloride in IL at low temperature. X-ray diffraction (XRD) revealed that the as-deposited Si films were crystalline at the temperature of 80 °C. Scanning electron microscopy (SEM) and Raman spectroscopy further indicated that the crystalline quality of the as-deposited silicon film was relatively the best when the electrodeposition time reached 1 h at the temperature of 100 °C; excessive electrodeposition would yield amorphous silicon on the surface of the as-deposit crystalline Si, which decreased the crystal quality of the Si film. The SEM and XRD, respectively, revealed that the crystal structure of Si yielded on e-InGa was significantly different from that produced on Ga and more impurities existed in the film. Research on the influence of these parameters on crystallinity and morphological characteristics of Si gives better control over the growth of crystalline Si thin films for specific applications.

Study on Solid Phase Crystallization of Silicon Films Deposited on Different Substrates

Study on solid-phase crystallization of B-doped a-Si:H film

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Fabrication of Microcrystalline Silicon Films by VHF-PECVD and Their Microstructure Study

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Impact of Alumina Coatings on Aluminum-Induced Crystallization of Polycrystalline Silicon Films

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Crystallization of amorphous silicon thin films: The effect of rapid thermal processing pretreatment

Preparation and Characterization of Crystalline Silicon by Electrochemical Liquid–Liquid–Solid Crystal Growth in Ionic Liquid

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Effect of Substrate Temperature and Pressure on Properties of Micro Crystalline Silicon Films

Influence of Substrate on the Growth of Microcrystalline Silicon Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

The Effects of Porous Silicon on the Crystalline Properties of ZnO Thin Films

Preparation of Polycrystalline Silicon of 100μm Size Large Grain Thin Films by Metal Induced Crystallization

Preparation and Etching of Silicon-Based Piezoelectric Thin Films for Integrated Devices