Abstract:Among the many ferroelectric film fabrication techniques, the sol-gel process provides high purity, large deposition area and easy composition control. However, the thickness limit of a crack-free single-layer film is about 0.2 mum and about 10 times of coating and thermal treatment processing are needed to deposit 1.5 mum-thick films. In laser ablation, the deposition rate is expected to be 1-2 mum/h, but the film quality is lower than that deposited by the sol-gel method. In this work, the hybrid process, involving the sol-gel method and laser ablation, was used to make 1.65 mum-thick lead zirconate titanate (PZT) films with well-crystallized perovskite phase at the (111) orientation. We deposited (111)-oriented 0.15 mum-thick PZT film on Pt/Ti/SiO2/Si substrates using the sol-gel method and then deposited 1.5 mum-thick PZT films by laser ablation. The remanent polarization of 28.6 muC/cm(2) and the coercive field of 58.0 kV/cm were obtained while the dielectric constant and loss values measured at 1 kHz were approximately 1050 and 0.045, respectively. The piezoelectric coefficient d(31) was also investigated and found to be 16.65 +/- 4 pC/N. In the application, a micromirror actuated by the hybrid PZT films was designed and fabricated successfully by a three-mask lithography process. The scanning angle of 6 2 degrees was demonstrated, while resonating with 5 V-p.p at the resonance frequency (1975 Hz).

Preparation and Etching of Silicon-Based Piezoelectric Thin Films for Integrated Devices

Fabrication And Etching Processes Of Silicon-Based Pzt Thin Films

Study of Fabrication and Etching Processes of PZT Thin Films on Silicon

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Study of silicon-based ferroelectric thin films prepared by Sol-Gel method

Study of silicon-based ferroelectric PZT thin films fabricated by sol-gel method

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Fabrication of (100) Orientated PZT Thin Films for MEMS Applications

Preparation of Pb(Zr0.52Ti484848)O3 Thin Films on Silicon-on-insulator Substrates by Excimer Laser Deposition Combined with Rapid Thermal Annealing

Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition

Preparation of Pb(Zr0.52Ti0.48)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Preparation of Pb(Zr<sub>0.52</sub>Ti484848)O<sub>3</sub> thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

Preparation and characterization of lead zirconate titanate thick films prepared by chemical solution deposition for MEMS applications

The Preparation and Characterization of the PZT Thin Film with (100) Peak Preferred Orientation

Effects of Substrate Quality on Fabrication of ZnO Piezoelectric Thin Film by Sol-gel Method

Preparation and Application of Lead Zirconate Titanate (PZT) Films Deposited by Hybrid Process: Sol-Gel Method and Laser Ablation

Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

Fabrication of PZT microdevices using a high-yield sol-gel process

Excellent Uniformity and Properties of Micro-Meter Thick Lead Zirconate Titanate Coatings with Rapid Thermal Annealing

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers