Fabrication of (100) Orientated PZT Thin Films for MEMS Applications

HJ Zhao,TL Ren,JS Liu,LT Liu,ZJ Li

DOI: https://doi.org/10.1080/713718235

2002-01-01

Integrated Ferroelectrics

Abstract:High quality silicon-based PZT thin films were prepared using an improved sol-gel process. PT thin film was adopted as the seeding layer. The fabrication technique and the growth mechanism of the PZT thin films crystallized with (100) preferred orientation were studied through changing the pre-annealing temperatures, the annealing temperatures and the thickness of the PT seeding layer. It was shown that the PZT thin films with the suitable seeding layer had a more highly (100) preferred orientation. The dielectric response and dielectric loss of the PZT thin films were also measured. In the radio-frequency (RF) region, the dielectric constant was about 150 and the dielectric loss was less than 0.01, respectively.