Hot wire chemical vapor deposition chemistry in the gas phase and on the catalyst surface with organosilicon compounds
Yujun Shi
DOI: https://doi.org/10.1021/ar500241x
2015-02-17
Abstract:CONSPECTUS: Hot wire chemical vapor deposition (HWCVD), also referred to as catalytic CVD (Cat-CVD), has been used to produce Si-containing thin films, nanomaterials, and functional polymer coatings that have found wide applications in microelectronic and photovoltaic devices, in automobiles, and in biotechnology. The success of HWCVD is largely due to its various advantages, including high deposition rate, low substrate temperatures, lack of plasma-induced damage, and large-area uniformity. Film growth in HWCVD is induced by reactive species generated from primary decomposition on the metal wire or from secondary reactions in the gas phase. In order to achieve a rational and efficient optimization of the process, it is essential to identify the reactive species and to understand the chemical kinetics that govern the production of these precursor species for film growth. In this Account, we report recent progress in unraveling the complex gas-phase reaction chemistry in the HWCVD growth of silicon carbide thin films using organosilicon compounds as single-source precursors. We have demonstrated that laser ionization mass spectrometry is a powerful diagnostic tool for studying the gas-phase reaction chemistry when combined with the methods of isotope labeling and chemical trapping. The four methyl-substituted silane molecules, belonging to open-chain alkylsilanes, dissociatively adsorb on W and Ta filaments to produce methyl radical and H2 molecule. Under the typical deposition pressures, with increasing number of methyl substitution, the dominant chemistry occurring in the gas phase switches from silylene/silene reactions to free-radical short chain reactions. This change in dominant reaction intermediates from silylene/silene to methyl radicals explains the observation from thin film deposition that silicon carbide films become more C-rich with a decreasing number of Si-H bonds in the four precursor molecules. In the case of cyclic monosilacyclobutanes, we have shown that ring-opening reactions play a vital role in characterizing the reaction chemistry. On the other hand, exocyclic Si-H(CH3) bond cleavages are more important in the less-puckered disilacyclobutane molecules. Metal filaments are essential in HWCVD since they serve as catalysts to decompose precursor gases to reactive species, which initiate gas-phase reaction chemistry and thin film growth. We discuss the structural changes in metal filaments when exposed to various precursor gases. Depending on the nature of the radical intermediates formed from the hot-wire decomposition and subsequent gas-phase reactions, metal silicides and carbides can be formed. Overall, study of the gas-phase reaction chemistry in HWCVD provides important knowledge of the chemical species produced prior to their deposition on a substrate surface. This helps in identifying the major contributor to alloy formation on the filament itself and the film growth, and consequently, in determining the properties of the deposited films. An integrated knowledge of the gas-phase reaction chemistry, filament alloy formation, and thin film deposition is required for an efficient deposition of high-quality thin films and nanomaterials.