Comparative study of large grains and high-performance TFTs in low-temperature crystallized LPCVD and APCVD amorphous silicon films
O.S. Panwar,R.A. Moore,S.H. Raza,H.S. Gamble,B.M. Armstrong
DOI: https://doi.org/10.1016/0040-6090(94)90270-4
IF: 2.1
1994-01-01
Thin Solid Films
Abstract:The crystallization of undoped amorphous silicon films deposited by low-pressure and atmospheric-pressure chemical vapour deposition (LPCVD and APCVD) at temperatures ranging between 510 and 650 °C and subsequently annealed at temperatures between 510 and 700 °C, for different durations, have been studied by transmission electron microscopy (TEM). It is found that the grain size in these films is influenced by the deposition and annealing temperatures and also by the deposition rate and film thickness. Maximum grain size of approximately 6400 Å has been obtained in LPCVD silicon films 2000 Å thick deposited at 540 °C and annealed at 550 °C for 144 h, whereas APCVD silicon films deposited at 590 °C and annealed at 610 °C for 72 h produced a grain size of approximately 4100 Å. At higher and lower deposition temperatures the grain size was found to be smaller.Self-aligned silicon-gate thin-film transistors (TFTs) have been made using these crystallized amorphous/polycrystalline silicon films deposited at different temperatures by LPCVD and APCVD techniques, using SiO2 grown thermally at 850 °C as a gate dielectric. Device properties in these TFTs depend upon the deposition temperature, and a mobility value of 26–28 cm2 V−1 s−1 has been observed in LPCVD silicon TFTs at a deposition temperature of 540 °C, whereas APCVD silicon TFTs deposited at 590 °C show a mobility value of only 10.5 cm2 V−1 s−1.
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films