Abstract:The effect of rapid thermal processing (RTP) on the oxygen precipitation occurring at 1050degreesC in a Czochralski (CZ) silicon wafer has been investigated. It has been proved that the RTP-induced vacancies only enhance the early stage oxygen precipitation at 1050degreesC in terms of the precipitation rate. Furthermore, it is somewhat unexpected that after a lengthy 1050degreesC anneal the oxygen precipitates generated in the CZ silicon wafer with prior RTP treatment had considerably lower density and larger sizes in comparison with those generated in the CZ silicon wafer without prior RTP treatment. The reason for this is that the prior RTP treatment will dissolve some of the grown-in oxygen precipitates, thus making the RTP-treated wafer possess fewer nuclei contributing to oxygen precipitation in the subsequent 1050degreesC anneal. Moreover, the numbers of resulting precipitated oxygen atoms due to a lengthy 1050degreesC anneal were nearly the same in the CZ silicon wafers with and without prior RTP treatment. Additionally, it has been illustrated that the high temperature RTP has superior capability to dissolve the existing oxygen precipitates. It is worthwhile to point out that, when addressing the effect of RTP on the oxygen precipitation behaviour during the subsequent anneal, two functions arising from the RTP treatment, that is, the injection of vacancies into the silicon wafer and the dissolution of grown-in oxygen precipitates existing in the silicon wafer, should be taken into account.

Modulation of Atomic-Layer-deposited Al2O3 Film Passivation of Silicon Surface by Rapid Thermal Processing

Effect of Rapid Thermal Processing on High Temperature Oxygen Precipitation Behaviour in Czochralski Silicon Wafer

Effects of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Wafer

Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Crystallization of amorphous silicon thin films: The effect of rapid thermal processing pretreatment

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

Effect of rapid thermal processing on surface plasmon resonance of Ag island films

Enhanced Electron Transport at the N+ Poly-Si/LiF/Al Interface in N-Topcon Silicon Solar Cells

Effects of Rapid Thermal Processing on Oxide Precipitation in Conventional and Nitrogen‐doped Czochralski Silicon

Study of Gamma-Ray Radiation Effects on the Passivation Properties of Atomic Layer Deposited Al2O3 on Silicon Using Deep-Level Transient Spectroscopy

Effect of Rapid Thermal Process on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon Wafer

Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon

Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer

Effect of Rapid Thermal Processing at High Temperature on Generation and Annihilation of Thermal Donors

Monocrystalline Silicon Solar Cells Fabricated by Rapid Thermal Processing

Effect Of Rapid Thermal Process On Oxygen Precipitation And Denuded Zone In Nitrogen-Doped Silicon Wafers

Light-soaking Enhanced Passivation of Al2O3 on Crystalline Silicon Surface

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass